Journal ArticleDOI
Spin resonance in electron irradiated silicon
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In this paper, the spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method.Abstract:
The spin resonance behavior in room temperature irradiated n‐type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are interpreted as containing impurity atoms and as having formed when the impurities trap mobile interstitials and/or vacancies. In quartz crucible grown silicon, the impurity may be oxygen. In the floating zone material, the impurity appears to be the phosphorus used in the doping. A 20°K irradiation and anneal is described which suggests the temperatures at which this defect motion is occurring. Features of the spin resonance spectra suggest that the vacancy may be the mobile effect.read more
Citations
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Journal ArticleDOI
Review of displacement damage effects in silicon devices
TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
Journal ArticleDOI
Diffusion mechanisms and point defects in silicon and germanium.
Book ChapterDOI
Electron Spin Resonance in Semiconductors
G.W. Ludwig,H.H. Woodbury +1 more
TL;DR: In this article, the application of electron spin resonance techniques to a particular group of crystalline semiconductors, including Si and related group IV elements and compounds, InSb and related 111-V compounds, and ZnS and related 11-VI compounds, is described.
Journal ArticleDOI
Defect production and lifetime control in electron and γ‐irradiated silicon
Stanley D. Brotherton,P. Bradley +1 more
TL;DR: In this paper, the effect of 1 − and 12 −MeV electron and Co60 γ irradiation has been made on power p−i−n diodes and Schottky barrier Diodes fabricated on the same starting material.
Journal ArticleDOI
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
TL;DR: In this article, a comprehensive model of the nucleation, growth, and dissolution of B clusters in implanted Si is presented, based on detailed interactions between B and defects in Si.
References
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Journal ArticleDOI
Sensitivity considerations in microwave paramagnetic resonance absorption techniques
TL;DR: In this article, the authors discuss some factors which limit the sensitivity of microwave paramagnetic resonance equipments and the results verified by measuring the signal-to-noise ratio with known amounts of a free radical.
Journal ArticleDOI
Infrared Absorption and Oxygen Content in Silicon and Germanium
W. Kaiser,P. H. Keck,C. F. Lange +2 more
TL;DR: In this paper, an optical absorption band at 9.6 was found to be correlated with the oxygen content in silicon, and it was found that the oxygen concentration in silicon crystals prepared by the floating zone technique in vacuum was less than 10.18$ oxygen atoms per cubic centimeter.
Journal ArticleDOI
Infrared Absorption of Oxygen in Silicon
H. J. Hrostowski,R.H. Kaiser +1 more
TL;DR: In this article, three infrared absorption bands have been correlated with the oxygen concentration of silicon, and a model in which interstitial oxygen is bonded to two adjacent silicon atoms in a nonlinear Si-O-Si unit was proposed.
Journal ArticleDOI
Paramagnetic Resonance in Electron Irradiated Silicon
TL;DR: In this paper, electron spin resonance has been observed in n-type silicon irradiated with 05-Mev electrons and the particular resonance lines discussed here appear only in pulled crystals which contain about 1018 oxygen atoms per cm3.
Journal ArticleDOI
Electron-bombardment damage in silicon
TL;DR: A spectrum of energy levels ruaning from 0.16 ev below the conduction band toward the middle of the gap is ascribed to a defect pair with variable spacing, and related to the discrete level 0.27 ev above the valence band.
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