Journal ArticleDOI
Spontaneous emission spectrum in n-type GaAs excited by a 40 kV electron beam at different ambient temperatures†
D. P. Pakui,A. K Chakravarti +1 more
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In this article, the spontaneous emission spectrum in n-type GaAs of donor concentration 6 × 1017 cm−3 excited by a 40 kV electron beam at different ambient temperatures above 100°K is theoretically determined.Abstract:
The spontaneous emission spectrum in n-type GaAs of donor concentration 6 × 1017 cm−3 excited by a 40 kV electron beam at different ambient temperatures above 100°K is theoretically determined. The procedure of determination is justified through reasonable agreement of the temperature dependence of the peak emission energy and the half-width of spontaneous emission as obtained from the computed cathodo-luminescence spectra with that observed experimentally. It is also concluded that the procedure will be equally valid for temperatures below 100°K and for arbitrary values of the donor concentration provided that the diffusion lengths of the minority carriers and the absorption coefficients as appropriate to such temperatures and donor concentrations are known.read more
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Journal ArticleDOI
Temperature dependence of the energy gap in semiconductors
TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
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Optical Properties of Semiconductors
H. R. Philipp,H. Ehrenreich +1 more
TL;DR: In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.
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Spontaneous and Stimulated Recombination Radiation in Semiconductors
Gordon J Lasher,Frank Stern +1 more
TL;DR: In this article, the spectral line shapes of the radiation produced by band-to-band recombination of excess carriers in semi-conductors are calculated under the assumption that the momentum matrix element is the same for all initial and final states, i.e., that there is no momentum selection rule.
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Physics of quantum electronics
TL;DR: In this article, a gathering of a small number of active scientists to discuss the physics of quantum electronics in a setting that would afford a maximum opportunity for close contact in a relaxed atmosphere with a minimum number of formally scheduled papers.