Journal ArticleDOI
Structural correlation in tantalum nitride formation by direct nitrogen implantation
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TLDR
In this paper, X-ray analyses of the implanted layers show a correlation between the types of nitrides formed and the implantation dosage, and possible shearing mechanisms responsible for nitride formation are proposed.About:
This article is published in Vacuum.The article was published on 1989-01-01. It has received 17 citations till now. The article focuses on the topics: Nitride & Tantalum nitride.read more
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Patent
HEAT GENERATING RESISTOR CONTAINING TaN0.8, SUBSTRATE PROVIDED WITH SAID HEAT GENERATING RESISTOR FOR LIQUID JET HEAD, LIQUID JET HEAD PROVIDED WITH SAID SUBSTRATE, AND LIQUID JET APPARATUS PROVIDED WITH SAID LIQUID JET HEAD
Masami Ikeda,Hiroshi Sugitani,Shigeyuki Matsumoto,Yasuhiro Naruse,Kenji Makino,Masaaki Izumida,Seiichi Tamura +6 more
TL;DR: In this article, a heat generating resistor comprised of a film composed of a TaN 0.8 -containing tantalum nitride material which is hardly deteriorated and is hardly varied in terms of the resistance value even upon continuous application of a relatively large quantity of an electric power over a long period of time.
Journal ArticleDOI
Composition of tantalum nitride thin films grown by low-energy nitrogen implantation: a factor analysis study of the Ta 4 f XPS core level
A. Arranz,C. Palacio +1 more
TL;DR: In this paper, the number of different Ta-N phases formed during nitrogen implantation, as well as their spectral shapes and concentrations, have been obtained using principal component analysis and iterative target transformation factor analysis, without any prior assumptions.
Journal ArticleDOI
Structural and mechanical characterization of Cr-Ta-N hard coatings prepared by reactive magnetron sputtering
TL;DR: In this paper, Alloyed Cr-Ta-N coatings with a range of Ta concentrations were deposited on oxidized silicon substrates in a reactive Ar + N 2 atmosphere by using a d.c. magnetron sputtering unit.
Journal ArticleDOI
The impact of substrate properties and thermal annealing on tantalum nitride thin films
TL;DR: In this paper, the impact of substrate properties, varying nitrogen content for film synthetization as well as post-deposition annealings in the temperature range up to 500°C was investigated.
Journal ArticleDOI
Cross-section measurements of the N14(α,p)O17 and N14(α,α)N14 reactions between 3.5 and 6 MeV
TL;DR: In this paper, the N14(α,p0)O17 reaction exhibits some resonances allowing traces of nitrogen to be quantified, and the sensitivity of these reactions (0.1%) was tested by measuring the nitrogen traces in a titanium oxide film deposited on silicon.
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Structure of Tantalum Nitrides
TL;DR: In this article, the crystal structure of tantalum nitrides was examined by X-ray and electron diffraction techniques and the following seven phases were identified: TaN~0.05 (cubic, β-phase), Ta2N (hexagonal, γ-phase, δ-TaN(hexagonal), e-TaNs (hexagon), Ta5N6, Ta4N5, and Ta3N5 (tetragonal or monoclinic).