Journal ArticleDOI
Structure of Tantalum Nitrides
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TLDR
In this article, the crystal structure of tantalum nitrides was examined by X-ray and electron diffraction techniques and the following seven phases were identified: TaN~0.05 (cubic, β-phase), Ta2N (hexagonal, γ-phase, δ-TaN(hexagonal), e-TaNs (hexagon), Ta5N6, Ta4N5, and Ta3N5 (tetragonal or monoclinic).Abstract:
The crystal structure of tantalum nitrides is examined by X-ray and electron diffraction techniques and the following seven phases are identified: TaN~0.05 (cubic, β-phase), Ta2N (hexagonal, γ-phase), δ-TaN (hexagonal), e-TaN (hexagonal), Ta5N6 (hexagonal), Ta4N5 (tetragonal) and Ta3N5 (tetragonal or monoclinic). Thin films of Ta nitrides for electron diffraction study were prepared by nitriding thin evaporated films of tantalum in ammonia and nitrogen. By heating thin films of Ta3N5 in vacuum, the phase transformations occur successively as follows: Ta3N5→Ta4N5→Ta5N6→e-TaN→Ta2N. The stucture of each nitride form is discussed.read more
Citations
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Journal ArticleDOI
Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
TL;DR: A review of the current research efforts in ALD for metal and nitride films as well as their applications in modern semiconductor device fabrication can be found in this paper, where the authors provide a deeper understanding about the underlying deposition process and the physical and electrical properties of the deposited films.
Journal ArticleDOI
Vertically aligned Ta3N5 nanorod arrays for solar-driven photoelectrochemical water splitting.
Yanbo Li,Tsuyoshi Takata,Dongkyu Cha,Kazuhiro Takanabe,Tsutomu Minegishi,Jun Kubota,Kazunari Domen +6 more
TL;DR: A vertically aligned Ta(3)N(5) nanorod photoelectrode is fabricated by through-mask anodization and nitridation for water splitting to yield a high photocurrent density and one of the highest activities reported for photoanodes so far.
Patent
HEAT GENERATING RESISTOR CONTAINING TaN0.8, SUBSTRATE PROVIDED WITH SAID HEAT GENERATING RESISTOR FOR LIQUID JET HEAD, LIQUID JET HEAD PROVIDED WITH SAID SUBSTRATE, AND LIQUID JET APPARATUS PROVIDED WITH SAID LIQUID JET HEAD
Masami Ikeda,Hiroshi Sugitani,Shigeyuki Matsumoto,Yasuhiro Naruse,Kenji Makino,Masaaki Izumida,Seiichi Tamura +6 more
TL;DR: In this article, a heat generating resistor comprised of a film composed of a TaN 0.8 -containing tantalum nitride material which is hardly deteriorated and is hardly varied in terms of the resistance value even upon continuous application of a relatively large quantity of an electric power over a long period of time.
Journal ArticleDOI
Crystallographic and morphological characterization of reactively sputtered Ta, TaN and TaNO thin films
TL;DR: In this article, the deposition of Ta, Ta N and Ta N O thin films by r.f.c. magnetron sputtering in Ar/N 2 /O 2 gas mixtures was characterized using four-point probe measurements.
References
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Journal ArticleDOI
Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films
D. Gerstenberg,C. J. Calbick +1 more
TL;DR: In this article, an investigation was made of tantalum films sputtered in argon containing individual small amounts of nitrogen, methane, and oxygen, and it was shown that the nitrides and carbide have specific resistivities from 200-300×10−6 Ω cm, and temperature coefficients between +3×10 −4 and −2×10 -4 deg−1.
Journal ArticleDOI
Crystal structure studies on trititanium pentoxide, Ti3O5
S. Åsbrink,A. Magnéli +1 more
Journal ArticleDOI
Über das Tantalnitrid Ta3N5 und das Tantaloxidnitrid TaON
G. Brauer,J. Weidlein,J. Strähle +2 more
TL;DR: In this paper, a rote Tantalnitrid Ta3N5 and a grune Tantaloxidnitric TaON werden aus Tantalpentoxid and ammoniak bei Temperaturen zwischen 800 and 900°C dargestellt.
Journal ArticleDOI
Structures des Oxydes de Niobium
TL;DR: The formation of the niobium oxides by heating thin films and the powder of Nb in various conditions has been followed by electron and X-ray diffraction as discussed by the authors.
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Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films
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