Study of low energy plasma ion implanted hydrogen in GaAs

Hydrogen plasma exposure of n‐type GaAs(Si) at 250 °C results in a decrease of the free‐carrier concentration by several orders of magnitude. This neutralization effect has been demonstrated in silicon‐doped layers grown by molecular beam epitaxy or formed by annealed implants as well as in bulk material. The same effect is produced electrochemically (H3PO4 electrolyte), whereas helium plasma exposure has no effect, thus confirming the role of hydrogen insertion. The hydrogen penetration depth into GaAs(Si) is inversely dependent on the Si concentration. Recovery of the electrical activity follows first order dissociation kinetics with a dissociation energy of 2.1 eV. Complete restoration of free‐carrier concentration occurs by heating at 420 °C for less than 3 min. Extrapolated to low temperatures, these results imply many years of stability at 150 °C or below.

Donor neutralization in GaAs(Si) by atomic hydrogen

Hydrogen is the lightest element in nature, and so, its detection and quantitative analysis is difficult by the conventional methods utilized for other elements. In the recent years the technique of elastic recoil detection analysis (ERD) using 1–2 MeV He+ beam has been developed to quantitatively and simultaneously analyze hydrogen and its isotopes in solids. Such a facility has been set up using the 2 MeV Van-de-Graaff accelerator at IIT Kanpur. It facilitates H and D analysis in a material up to a depth of ∼ 1µm with a detection sensitivity of 0·1 at.% and depth resolution of about 300 A. The application potential of this setup is illustrated by presenting the results of measurements performed on Al:H:D systems prepared by plasma source ion implantation and highT
 c YBCO pellets exposed to humid atmosphere.

/pdf/erd-facility-for-analysis-of-hydrogen-and-deuterium-in-148ha4zxxh.pdf

Study of low energy plasma ion implanted hydrogen in GaAs

References

Donor neutralization in GaAs(Si) by atomic hydrogen

ERD facility for analysis of hydrogen and deuterium in solids

Related Papers (5)

Doping of gallium arsenide by the implantation of zinc ions.

Comparison of electrical and atomic profiles of Mg 24 and Zn 64 implanted GaAs samples and GaAsGaAlAs heterostructures for bipolar transistor applications

Oxygen incorporation in aluminium-based semiconductors grown by metalorganic vapour phase epitaxy

Deep level transient spectroscopy of DX centers

Molecular layer epitaxy of GaAs