Proceedings ArticleDOI
Submicron-AlGaN/GaN MMICs for space applications
Rudiger Quay,Patrick Waltereit,Jutta Kuhn,Peter Brückner,M. van Heijningen,P. Jukkala,K. Hirche,Oliver Ambacher +7 more
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TLDR
In this article, the authors report on two AlGaN/GaN MMIC technologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies.Abstract:
This paper reports on two AlGaN/GaN MMIC technologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency. Dual-stage 8 W output power MMICs for telemetry applications in space have a PAE of more than 50% at 8.5 GHz with a lifetime of 106 h at a channel temperature of 200°C. Space evaluation tests indicate a stability of this technology suitable for space. For scientific missions a high-gain high power amplifier MMIC and module have been developed for 90 GHz operation with up to 16 dB of linear gain and 400 mW of output power.read more
Citations
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Proceedings ArticleDOI
3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier
Yoshitaka Niida,Yoichi Kamada,Toshihiro Ohki,Shiro Ozaki,Kozo Makiyama,Yuichi Minoura,Naoya Okamoto,Masaru Sato,Kazukiyo Joshin,Keiji Watanabe +9 more
TL;DR: In this paper, a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs was demonstrated, which achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation.
Journal ArticleDOI
The Sky's the Limit: Key Technology and Market Trends in Satellite Communications
TL;DR: The growth of demand for broadband has been seen in satellite communications as it has in other aspects of the market and broadband data links are required to avoid loss of data since on-board storage capacity for this data is limited.
PatentDOI
N-polar III-nitride transistors
TL;DR: In this article, the compositional difference between the first III-N barrier layer and the third-N channel layer causes a conductive channel to be induced in the access regions of the III-n channel layer.
Proceedings ArticleDOI
A 5.4W X-band gallium nitride (GaN) power amplifier in an encapsulated organic package
TL;DR: In this article, an encapsulated package is investigated to circumvent the thermal limitations of liquid crystal polymer (LCP), one such organic, while leveraging its multilayer and microwave advantages, showing a PAE of 38% and PSAT of 5.4W under CW operation, or 49% PAE and 7W PSAT at 50% duty cycle.
Dissertation
Design of High Linearity MMIC Power Amplifiers for Space Applications
TL;DR: In this article, the authors present a design strategy for GaAs pHEMT MMIC high linear power amplifiers intended for multicarrier operation at C and extended C-band.
References
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Journal ArticleDOI
Development of a high transconductance GaN MMIC technology for millimeter wave applications
TL;DR: In this paper, the influence of barrier thickness on the maximum transconductance (gm,max) was investigated by using two different technologies: growth of thin barrier layers and deep gate recess.
Proceedings Article
W-band power amplifier MMIC with 400 mW output power in 0.1 µm AlGaN/GaN technology
M. van Heijningen,M. Rodenburg,F.E. van Vliet,Hermann Massler,Axel Tessmann,Peter Brückner,Stefan Müller,Dirk Schwantuschke,Ruediger Quay,Tapani Narhi +9 more
TL;DR: The 0.1 μm AlGaN/GaN technology and the design of two W-band power amplifiers in this technology are described in this article, where the dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V.
Proceedings Article
High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10 5 hours
Patrick Waltereit,Jutta Kuhn,Rudiger Quay,F. van Raay,Michael Dammann,M. Casar,Stefan Müller,Michael Mikulla,Oliver Ambacher,J. Latti,M. Rostewitz,K. Hirche,J. Daubler +12 more
TL;DR: In this article, the authors report on the technology, performance and reliability of state-of-the-art AlGaN/GaN MMICs for space applications, which have breakdown voltages beyond 150 V and deliver 5 W/mm output power density at 30 V drain bias with 50% PAE at 10 GHz operating frequency.