S
Srabanti Chowdhury
Researcher at Stanford University
Publications - 136
Citations - 3319
Srabanti Chowdhury is an academic researcher from Stanford University. The author has contributed to research in topics: Gallium nitride & Transistor. The author has an hindex of 25, co-authored 111 publications receiving 2300 citations. Previous affiliations of Srabanti Chowdhury include Arizona State University & Arizona's Public Universities.
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
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Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure
TL;DR: In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed, and the current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture.
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CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
TL;DR: In this article, a current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device.
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Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer
TL;DR: In this paper, the authors used Mg-implanted GaN as a current blocking layer for nonalloyed source contacts and achieved a maximum source-drain current of 0.22 A/mm and an extrinsic transconductance of 54 mS/mm of source.
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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
TL;DR: In this article, vertical GaN devices are discussed with emphasis on current aperture vertical electron transistors (CAVETs), and the fabrication-related challenges and future possibilities enabled by the availability of good-quality, cost-competitive bulk GaN material are also evaluated for CAVET.