Journal ArticleDOI
The amorphous SbSe system
C. Wood,R. Mueller,L.R. Gilbert +2 more
TLDR
In this paper, the complete compositional range of the amorphous SbSe system has been prepared in thin-film form by a simple evaporation technique, and optical and transport properties have been measured as a function of composition.Abstract:
Essentially the complete compositional range of the amorphous SbSe system has been prepared in thin-film form by a simple evaporation technique. Optical and transport properties have been measured as a function of composition.read more
Citations
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A review of Sb2Se3 photovoltaic absorber materials and thin-film solar cells
Abdurashid Mavlonov,Abdurashid Mavlonov,T. M. Razykov,Fazal Raziq,Jiantuo Gan,Jakapan Chantana,Yu Kawano,Takahito Nishimura,Haoming Wei,Andriy Zakutayev,Takashi Minemoto,Xiaotao Zu,Sean Li,Liang Qiao +13 more
TL;DR: In this article, the authors provided an overview of the material properties of Sb2Se3 thin films and the recent progress made with Sb 2Se3-based solar cells and suggested main research directions to overcome the limiting factors of solar cell performance.
Journal ArticleDOI
On the compositional dependence of the optical gap in amorphous semiconducting alloys
TL;DR: In this article, the optical gap for amorphous A-B alloys can be determined by the energy gap EA for element A and EAB for the element B in the equation EAB(Y) = YEA + (1−Y) EB where Y is the volume fraction of element A.
Journal ArticleDOI
The relationship between optical gap and chemical composition in SbxSe1−x system
TL;DR: In this article, the optical constants of vacuum deposited SbxSe1−x amorphous thin films (x = 0.075, 0.15 and 0.20 at%) were studied in the wavelength range 550-800 nm.
Journal ArticleDOI
The composition dependence of the gap in amorphous films of SixGe1−x, SbxSe1−x and AsxTe1−x systems
TL;DR: In this paper, the gap energies of the amorphous thin films of Si x Ge 1−x, Sb x Se 1− x and As x Te 1−X systems were correlated with the mean bond energy using Manca's relation.
Journal ArticleDOI
The influence of antimony impurity on optical and electrical properties of amorphous selenium
TL;DR: Amorphous Se1-xSbx alloys were prepared using a conventional rapid quenching technique as discussed by the authors, and the optical energy gap of amorphous selenium was found to be 199+or-002 eV It reduces drastically on substitution of 2 at% Sb after which its variation with x is small.
References
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Book
Electronic processes in non-crystalline materials
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Journal ArticleDOI
Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
E. A. Davis,Nevill Mott +1 more
TL;DR: In this article, the experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c and a.c. conductivity, drift mobility and optical absorption.
Journal ArticleDOI
Optical Properties of Semiconductors
H. R. Philipp,H. Ehrenreich +1 more
TL;DR: In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.
Journal ArticleDOI
Simple band model for amorphous semiconducting alloys
TL;DR: Amorphous covalent alloys particularly of group-IV, -V, and -VI elements are readily formed over broad ranges of composition and have been described as low-mobility electronic intrinsic semiconductors with a temperature-activated electrical conductivity σ = σ 0×exp(-ΔE/kT) which sometimes extends well into the molten state as discussed by the authors.
Journal ArticleDOI
Bonding Bands, Lone-Pair Bands, and Impurity States in Chalcogenide Semiconductors
TL;DR: In this article, the authors examined the effects of compositional variation on the distribution of states in amorphous semiconductors and predicted that an Anderson transition will occur in the band of lone-pair states when a group-VI element is added to a tetrahedral amorphized semiconductor.