Journal ArticleDOI
The lumped-charge power MOSFET model, including parameter extraction
I. Budihardjo,P.G. Lauritzen +1 more
TLDR
A physically-based power MOSFET model with continuous and accurate curves for all three interelectrode capacitances is presented in this article, which is used to design a snubber for a flyback converter.Abstract:
A fundamentally new, physically-based power MOSFET model features continuous and accurate curves for all three interelectrode capacitances. The model equations are derived from the charge stored on two internal nodes and the three external terminals. A straightforward parameter extraction technique uses the standard gate-charge plot or process data and is matched with interelectrode capacitance measurements. Simulations are in excellent agreement with measurements. The model is used to design a snubber for a flyback converter. >read more
Citations
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Journal ArticleDOI
Status and trends of power semiconductor device models for circuit simulation
R. Kraus,Hans Jurgen Mattausch +1 more
TL;DR: The current status of research in the field of power semiconductor device models is reviewed in this article, where some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed and feasibility of parameter determination.
Journal ArticleDOI
New modeling of the power diode using the VHDL-AMS language
TL;DR: This paper focuses on an implementation of a physic-based analytical PIN diode model with the very high description language VHDL-AMS with the Lumped Charge (LC) concept of Linvill employed.
Journal ArticleDOI
Modeling of power diodes with the lumped-charge modeling technique
C.L. Ma,P.O. Lauritzen,J. Sigg +2 more
TL;DR: In this article, the lumped-charge modeling technique is used to build a simple, physics-based power diode model for circuit simulators, which consists of simplified, but fundamental semiconductor device equations.
Proceedings ArticleDOI
MOSFET switching behaviour under influence of PCB stray inductance
TL;DR: In this article, an analytical expression for the power MOSFET turn-off overvoltage, including the influence of PCB interconnects, is derived by means of the partial element equivalent circuit (PEEC) method.
Journal ArticleDOI
Performance requirements for power MOSFET models
TL;DR: In this article, the power MOSFET model performance required for accurate waveform simulation is evaluated for most power converter circuits through C-V plots, gate charge plots and power converter data.
References
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Journal ArticleDOI
A simple diode model with reverse recovery
P.O. Lauritzen,C.L. Ma +1 more
TL;DR: In this paper, the basic diode charge control model used in SPICE is extended to include reverse recovery, and the model is derived from the semiconductor charge transport equations using the lumped charged concept of Linvill, and demonstrated on the Saber simulator for simple inductive and resistive load circuits.
Journal ArticleDOI
An accurate model for power DMOSFETs including interelectrode capacitances
TL;DR: In this paper, a novel methodology for modeling power MOS devices using a SPICE-compatible subcircuit is proposed, where the interelectrode capacitances are modeled accurately as nonlinear functions of the applied biases.
Journal ArticleDOI
Performance requirements for power MOSFET models
TL;DR: In this article, the power MOSFET model performance required for accurate waveform simulation is evaluated for most power converter circuits through C-V plots, gate charge plots and power converter data.
Modelling and simulation of power mosfet's and power diodes
TL;DR: In this paper, a model of the power Mosfet is modified, improved and implemented into SPICE for parameter extraction from electrical measurements, and the simulation results show a good agreement with the measurements.
Proceedings ArticleDOI
Modelling and simulation of power MOSFETs and power diodes
C.H. Xu,D. Schroder +1 more
TL;DR: In this paper, a model of a power MOSFET has been improved and implemented in SPICE, and a method for parameter extraction from electrical measurements has been developed, which is simple and accurate, and the simulation results show good agreement with the measurements.