Journal ArticleDOI
The present position of theory and experiment for VO2
TLDR
In this paper, the most important electrical and optical properties of VO2 below and above the transition temperature between insulating and metallic behavior are analyzed to provide a few basic conclusions regarding the band structure and the transport mechanism.About:
This article is published in Materials Research Bulletin.The article was published on 1970-08-01. It has received 75 citations till now. The article focuses on the topics: Phase transition.read more
Citations
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Journal ArticleDOI
P2-NaxVO2 system as electrodes for batteries and electron-correlated materials
TL;DR: The detailed phase diagram of the layered P2-Na(x)VO(2) system determined from electrochemical intercalation/deintercalation in sodium batteries and in situ X-ray diffraction experiments shows that four main single-phase domains exist within the 0.5≤x≤0.9 range.
Journal ArticleDOI
Electronic structure of Mott insulators
TL;DR: In this article, the Hartree-Fock approach is used to explain the properties of metal-insulators and other related phase transitions, as observed in V2O3 and several other materials.
Journal ArticleDOI
Recent progresses on physics and applications of vanadium dioxide
TL;DR: In this article, the phase transition mechanism and dynamics, phase diagrams, and imperfection effects, as well as growth and applications of vanadium dioxide (VO2) have been reviewed.
Journal ArticleDOI
The metal-nonmetal transition
Nevill Mott,Z Zinamon +1 more
TL;DR: In this article, the Hartree-Fock approximation is used to describe the band overlap or Wilson transition, which occurs when a conduction band overlaps a valence band; this is discussed in § 2 and for noncrystalline systems in § 15.
Journal ArticleDOI
Metal-insulator transitions in VO2, Ti2O3 and Ti2-x V x O3
N. F. Mott,L. Friedman +1 more
TL;DR: In this article, a discussion is given of metal-insulator transitions in VO2, Ti2O3 and also in Ti2-x V x O3, which at low temperatures becomes metallic with increasing x. Although these are band-crossing transitions, there being no magnetic moments on the metallic ions, a large discontinuity is expected in the number of current-carriers, as the degree of pairing of the V atoms is varied.
References
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Journal ArticleDOI
Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature
Larry A. Ladd,William Paul +1 more
TL;DR: In this article, the dependence of the transition temperature and semiconducting resistivity upon uniaxial stress and hydrostatic pressure has been determined, and it was shown that V 2 O 4 has a change in resistivity of a factor of 10 5 at 339°K.
Journal ArticleDOI
Theory of semiconductor-to-metal transitions
TL;DR: In this paper, a general model for a semiconductor-to-metal transition is discussed, in which the energy gap between the valence and conduction bands decreases linearly with the number of electrons excited across the gap.
Journal ArticleDOI
Suppression of the semiconductor-metal transition in vanadium oxides☆
T.N. Kennedy,J.D. Mackenzie +1 more
TL;DR: The conductivity of amorphous V 2 O 4 is almost four orders of magnitude greater than that of the crystal at 25 °C, due to the absence of the semiconductor-metal transition as mentioned in this paper.
Related Papers (5)
Electronic Properties of V O 2 near the Semiconductor-Metal Transition
C. N. Berglund,H. J. Guggenheim +1 more