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Journal ArticleDOI

The two components of the crystallographic transition in VO2

TLDR
In this article, two distinguishable mechanisms of the monoclinic-to-tetragonal transition in VO 2 are identified: an antiferroelectric-toparaelectric transition at a temperature T t as well as a change from homopolar to metallic VV bonding at T t.
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This article is published in Journal of Solid State Chemistry.The article was published on 1971-11-01. It has received 1154 citations till now. The article focuses on the topics: Transition temperature.

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Citations
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Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

TL;DR: In this paper, the authors discuss the role of materials synthesis in influencing functional properties and discuss future research directions that may be worth consideration, concluding with a brief discussion on future directions that are worth consideration.
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Electrodynamics of correlated electron materials

TL;DR: In this article, the authors review studies of the electromagnetic response of various classes of correlated electron materials including transition metal oxides, organic and molecular conductors, intermetallic compounds with $d$- and $f$-electrons as well as magnetic semiconductors.
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Collective bulk carrier delocalization driven by electrostatic surface charge accumulation

TL;DR: This work prepared metal–insulator–semiconductor field-effect transistors based on vanadium dioxide and found that electrostatic charging at a surface drives all the previously localized charge carriers in the bulk material into motion, leading to the emergence of a three-dimensional metallic ground state.
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Evidence for a structurally-driven insulator-to-metal transition in VO 2 : A view from the ultrafast timescale

TL;DR: In this article, the authors apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly correlated electron system, and they discuss the case of the model system, a prototypical nonmagnetic compound that exhibits cell doubling, charge localization, and a metal-insulator transition below 340 K.
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Localized Surface Plasmon Resonance in Semiconductor Nanocrystals

TL;DR: The fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs are discussed.
References
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Journal ArticleDOI

Optical Properties of V O 2 between 0.25 and 5 eV

TL;DR: In this paper, the optical constants of V${\mathrm{O}}_{2} have been determined between 0.25 and 5 eV both below and above the semiconductor-metal transition temperature.
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Direct cation- -cation interactions in several oxides

TL;DR: In this paper, it was pointed out that interactions between octahedral-site cations are cation-anion-cation interactions if the cation occupied octahedra share a common corner, but may be primarily cation -cation (no anion intermediary) if they share either a common edge or a common face.
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Optical Properties and Band Structure of Wurtzite-Type Crystals and Rutile

TL;DR: In this paper, the fundamental reflectivity of several optically anisotropic materials (hexagonal ZnS, CdS, cdSe, and rutile) has been measured at room temperature with linearly polarized light of wavelength longer than 1100 \AA{}.
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