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Theory of crystal dislocations
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The article was published on 1967-01-01 and is currently open access. It has received 1743 citations till now. The article focuses on the topics: Partial dislocations & Dislocation creep.read more
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Dislocations in wave trains
John F. Nye,Michael V Berry +1 more
TL;DR: In this paper, it was shown that dislocations are to be expected whenever limited trains of waves, ultimately derived from the same oscillator, travel in different directions and interfere -for example in a scattering problem.
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Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
R. People,John C. Bean +1 more
TL;DR: In this article, the critical layer thickness for growth of GexSi1−x strained layers on Si substrates is calculated for 0≤x≤1.0.
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Automated identification and indexing of dislocations in crystal interfaces
TL;DR: In this paper, a discrete Burgers circuit integral over the elastic displacement field is used to identify partial and interfacial dislocations in atomistic models of crystals with defects, which is not limited to specific lattices or dislocation types.
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Stress-dependent finite growth in soft elastic tissues
TL;DR: A general continuum formulation for finite volumetric growth in soft elastic tissues is proposed and it is shown that transmurally uniform pure circumferential growth, which may be similar to eccentric ventricular hypertrophy, changes the state of residual stress in the heart wall.
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Structure identification methods for atomistic simulations of crystalline materials
TL;DR: In this article, the authors discuss existing and new computational analysis techniques to classify local atomic arrangements in large-scale atomistic computer simulations of crystalline solids and introduce a new structure identification algorithm, the Neighbor Distance Analysis, that is designed to identify atomic structure units in grain boundaries.