Journal ArticleDOI
Theory of quasi-diode operation of reversely switched dinistors
TLDR
In this paper, the uniform plasma injection regime in reversely switched dinistors (RSD) was investigated and criteria of the quasi-diode operation were established in both the micro-and sub-microsecond range of operation.Abstract:
This paper deals with the uniform plasma injection regime in reversely switched dinistors (RSD) which is similar to the drift double-injection regime in p + nn + -diodes. Such a regime is distinguished as highly efficient and most stable. The anode current retroactive mechanism controlled by the plasma in the collector layer is investigated and criteria of the quasi-diode operation are established. The theory explains the main characteristics of the RSD in both the micro- and submicrosecond range of operation. It also allows the calculation of time dependence of current density and voltage drop. The criteria derived are in good agreement with empirical data.read more
Citations
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Journal ArticleDOI
New principles of high power switching with semiconductor devices
TL;DR: In this paper, the impact ionization wave was used to develop diode pulse sharpeners (PS) switching power of a hundreds kW in tens of picoseconds at a frequency > 104 Hz.
Journal ArticleDOI
Final results from the high-current, high-action closing switch test program at Sandia National Laboratories
TL;DR: A variety of high-current closing switches for lifetime and reliability on a dedicated 2-MJ, 500-kA capacitor bank facility at Sandia National Laboratories are tested, finding that the observed lifetime of different switches varied greatly: the shortest life was one shot; one device was still operating after 6000 shots.
Journal ArticleDOI
Reverse switching dynistor pulsers
S. Schneider,T.F. Podlesak +1 more
TL;DR: In this article, the reverse switching dynistor (RSD) is used to generate a uniform plasma distribution during turn-on, which reduces commutation dissipation and permits high di/dt operation.
Journal ArticleDOI
Analysis of the turn-on process in 6 kV 4H-SiC junction diodes
Tigran T. Mnatsakanov,M. E. Levinshtein,Pavel Ivanov,John W. Palmour,Mrinal K. Das,Anant K. Agarwal +5 more
TL;DR: In this article, it was demonstrated that, at high current densities exceeding the critical value jcr = eNDvs (e is the elementary charge, ND is the base doping level, and vs is the carrier saturation velocity) and rather short current rise time (1 ns), an extremely fast base modulation can be achieved.
Journal ArticleDOI
Two-electrode gas switch with electrodynamical acceleration of a discharge channel.
TL;DR: A compact gas switch and a matched series injection trigger generator that can be triggered reliably down to zero voltage with less than 35 ns timing jitter is developed and energy losses in this spark gap have been accurately investigated.
References
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Journal ArticleDOI
Superpower switch of microsecond range
Journal ArticleDOI
Transient Double Injection in Trap‐Free Semiconductors
TL;DR: In this article, a step voltage is applied to injecting contacts on the ends of a long trap-free semiconductor, such as p-type germanium, and an electronhole plasma forms at the minority-carrier injecting end and propagates down the length of the bar.