Patent
Thin-film device and method of fabricating the same
Kazushige Takechi,Mitsuru Nakata +1 more
TLDR
A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical, and a second electrical, forming an active layer as mentioned in this paper, which is defined as the oxide-smiconductor material defining an active surface.Abstract:
A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.read more
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Patent
Semiconductor device and display device
Hajime Kimura,Shunpei Yamazaki +1 more
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Patent
Semiconductor device, electronic device, and method of manufacturing semiconductor device
TL;DR: In this article, the authors propose a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Patent
Field-effect transistor and method for manufacturing the same
TL;DR: A method for manufacturing a field effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium, forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or Deuterium is added as discussed by the authors.
Patent
Semiconductor device and method for manufacturing the same, and electric device
Hideaki Kuwabara,Hiroko Yamamoto +1 more
TL;DR: In this article, a plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to reduce a partial depression and also to ensure contact resistance.
Patent
Electronic device, semiconductor device and manufacturing method thereof
Shinji Maekawa,Hideaki Kuwabara +1 more
TL;DR: In this paper, a photoensitive material solution of a conductive film is selectively discharged by a droplet discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to the laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging.
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Patent
Amorphous oxide and field effect transistor
TL;DR: In this article, a novel amorphous oxide applicable to an active layer of a TFT is provided, which consists of microcrystals and can be applied to any TFT.
Patent
Transistor structures and methods for making the same
John F. Wager,Randy Hoffman +1 more
TL;DR: In this paper, the field effect transistors (FET) have been extended to include a gate insulator layer comprising a substantially transparent material adjacent to the channel layer so as to define a channel layer/gate insulator interface.
Patent
Sensor and image pickup device
TL;DR: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode is described in this article.
Patent
Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
TL;DR: In this paper, a display backplane including the ZnO row and column drivers and the OLEDs may be constructed by utilizing aperture masking or a combination of photolithography and aperture masks.
Patent
Method of fabricating oxide semiconductor device
Nobuyuki Kaji,Hisato Yabuta +1 more
TL;DR: In this article, a method for fabricating a device using an oxide semiconductor, including a process of forming the oxide on a substrate and changing the conductivity of the oxide by irradiating a predetermined region thereof with an energy ray, is presented.