Patent
Transistor structures and methods for making the same
John F. Wager,Randy Hoffman +1 more
TLDR
In this paper, the field effect transistors (FET) have been extended to include a gate insulator layer comprising a substantially transparent material adjacent to the channel layer so as to define a channel layer/gate insulator interface.Abstract:
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, Sn02, or In203. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, Sn02or In2O3, the substantially insulating ZnO, Sn02, or In203 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.read more
Citations
More filters
Patent
Light-emitting device
TL;DR: In this paper, a light-emitting device with the use of an amorphous oxide was presented, which has a lightemitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an Amorphous.
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Field-effect transistor
TL;DR: In this paper, a field-effect transistor with an active layer and a gate insulating film is presented, where the active layer includes an amorphous oxide layer and the gate insulator.
Patent
Amorphous oxide and thin film transistor
TL;DR: In this paper, an amorphous oxide and a thin-film transistor were constructed using an electron carrier concentration less than 10 18 /cm 3, where the electron carrier was obtained by using a gate electrode and gate insulating film.
Patent
Amorphous oxide and field effect transistor
TL;DR: In this article, a novel amorphous oxide applicable to an active layer of a TFT is provided, which consists of microcrystals and can be applied to any TFT.
References
More filters
Journal ArticleDOI
Organic Field‐Effect Transistors
TL;DR: In this paper, the performance of organic field effect transistors (OFETs) is examined in terms of field effect mobility and on-off current ratio, and the most prominent fabrication techniques are described.
Journal ArticleDOI
A ferroelectric transparent thin‐film transistor
Mwj Menno Prins,K.-O. Grosse-Holz,G. Muller,J.F.M. Cillessen,Jacobus Bernardus Giesbers,RP Weening,Ronald Martin Wolf +6 more
TL;DR: In this paper, a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator.
Patent
Thin film transistor and matrix display device
TL;DR: In this article, a thin-film transistor with a transparent semiconductor film is proposed, and the oxide is formed of the oxide to restrain a material for the second layer from depriving oxygen of the semiconductor layer.
Patent
Transistor and semiconductor device
Masashi Kawasaki,Hideo Ohno +1 more
TL;DR: In this article, a transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like, and a transparent electrode is used for all of a source, a drain and a gate.
Patent
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
TL;DR: A natural superlattice homologous single crystal thin film, characterized in that it comprises a composite oxide which is represented by the formula M1M2O3(ZnO)m, is a natural number of 1 or more as discussed by the authors.