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Thin Films—Interdiffusion and Reactions

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This article is published in Journal of The Electrochemical Society.The article was published on 1979-09-01. It has received 1131 citations till now. The article focuses on the topics: Thin film.

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Six cases of reliability study of Pb-free solder joints in electronic packaging technology

TL;DR: In this paper, the authors used the format of case study to review six reliability problems of Pb-free solders in electronic packaging technology and conducted analysis of these cases on the basis of thermodynamic driving force, time-dependent kinetic processes, and morphology and microstructure changes.
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Transition metals in silicon

TL;DR: In this paper, a review on the diffusion, solubility and electrical activity of 3D transition metals in silicon is given, which can be divided into two groups according to the respective enthalpy of formation of the solid solution.
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Recent advances on electromigration in very-large-scale-integration of interconnects

TL;DR: In this paper, the authors reviewed what is current with respect to electromigration in Cu in terms of resistance, capacitance delay, electromigration resistance, and cost of production, and concluded that the most serious and persistent reliability problem in interconnect metallization is electromigration.
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Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’

TL;DR: In this paper, it is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin.
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Kinetics of interfacial reaction in bimetallic CuSn thin films

TL;DR: In this paper, the formation of Cu6Su5 between Cu and Sn thin films at room temperature and of Cu3Sn between Cu6Sn5 and Cu at temperatures from 115° to 150°'C were measured by Rutherford backscattering spectroscopy and glancing-incidence X-ray diffraction.