Journal ArticleDOI
Refractory silicides for integrated circuits
TLDR
In this paper, various properties and the formation techniques of transition metal silicides have been reviewed and relations between the various properties of the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications.Abstract:
Transition metal silicides have, in the past, attracted attention because of their usefulness as high temperature materials and in integrated circuits as Schottky barrier and ohmic contacts. More recently, with the increasing silicon integrated circuits (SIC) packing density, the line widths get narrower and the sheet resistance contribution to the RC delay increases. The possibility of using low resistivity silicides, which can be formed directly on the polysilicon, makes these silicides highly attractive. The usefulness of a silicide metallization scheme for integrated circuits depends, not only on the desired low resistivity, but also on the ease with which the silicide can be formed and patterned and on the stability of the silicides throughout device processing and during actual device usage. In this paper, various properties and the formation techniques of the silicides have been reviewed. Correlations between the various properties and the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications. Special reference to the silicide resistivity, stress, and oxidizability during the formation and subsequent processing has been given. Various formation and etching techniques are discussed.read more
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Alternative Plasmonic Materials: Beyond Gold and Silver
TL;DR: This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskiteOxides, metal nitrides, silicides, germanides, and 2D materials such as graphene.
Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
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Different approaches to superhard coatings and nanocomposites
TL;DR: In this paper, different approaches to the preparation of superhard coatings such as intrinsically superhard materials, coatings whose hardness is enhanced by energetic ion bombardment during deposition, and nanostructured super-hard materials are discussed with the emphasis on the question of how to distinguish between the different mechanisms of hardness enhancement in thin coatings.
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Ion beam crystallography of surfaces and interfaces
TL;DR: The current status of Rutherford Backscattering Spectrometry (RBS) of surfaces and interfaces is reviewed in this article, along with a variety of Monte Carlo methods for computer simulation of the shadowing and blocking experiments.
Journal ArticleDOI
Approximation of wiring delay in MOSFET LSI
TL;DR: Two approximation methods for wiring delay in MOS LSI are studied and the widely used L ladder circuit model is found to be a poor approximation, while /spl pi and T ladder circuit models give satisfactory results.