Proceedings ArticleDOI
Ultra Wideband Receiver Protection Limiter Using 0.13m pHEMT Technology
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TLDR
This paper describes design and development of an ultra-wideband receiver protection limiter realized using 0.13um pHEMT technology that achieves very low insertion loss, wide band match S11/S22 > 10dB and high power handling of 33dBm over a very high bandwidth of 0.5 to 18GHz.Abstract:
This paper describes design and development of an ultra-wideband receiver protection limiter realized using 0.13um pHEMT technology. The limiter achieves very low insertion loss of > 1dB, wide band match S11/S22 > 10dB) and high power handling of 33dBm (2W) over a very high bandwidth of 0.5 to 18GHz. The flat leakage power of the designed limiter is 20dBm. The chip is realized in a very compact size of 1.6×0.71mm.read more
Citations
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A compact Ka‐band limiter‐low noise amplifier MMIC with high power capability
TL;DR: In this article , a 30-36 GHz limiter low-noise amplifier (limiter-LNA) was proposed for high power and high mobility millimeter-wave radar systems.
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Highly Robust 130 nm SiGe BiCMOS Power Limiter, LNA and Mixer IC for a Wideband 1.5 - 18 GHz MIMO Radar Receiver
TL;DR: In this paper, the authors presented a highly robust 1.5 -18 GHz high dynamic range power limiter, low noise amplifier (LNA) and mixer IC, which stands out for its low capacitive behavior.
Book ChapterDOI
A GaN Based Reverse Recovery Time Limiter Circuit Integrated with a Low Noise Amplifier
Neha Bajpai,Yogesh Singh Chauhan +1 more
TL;DR: In this paper , a GaN-only robust low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) integrated with a reverse recovery time compensation (RRTC) circuit at the input is presented.
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A 27-35 GHz wideband PIN-diode limiter low noise amplifier MMIC with sub-2.4 dB noise figure
TL;DR: In this paper , a PIN-diode limiter and low-noise amplifier (LNA) are co-designed to improve the small-signal performance of millimeter-wave radar applications.
References
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Proceedings ArticleDOI
Set of X-band distributed absorptive limiter GaAs MMICs
TL;DR: A set of X-band absorptive limiter GaAs MMICs has been designed and realized using both the PPH25x foundry process from UMS and the PP50-10 process from WIN semiconductors as discussed by the authors.
Journal ArticleDOI
Schottky diode‐based microwave limiter with adjustable threshold power level
TL;DR: In this article, the authors present design, realization and test results of an Schottky diode limiter with provision of adjustable threshold power level operating at 11.5 GHz.