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Journal ArticleDOI

Ultrahigh resolution of calixarene negative resist in electron beam lithography

Jun-ichi Fujita, +3 more
- 26 Feb 1996 - 
- Vol. 68, Iss: 9, pp 1297-1299
TLDR
In this paper, a nonpolymer material, calixarene derivative (hexaacetate p‐methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process.
Abstract
A nonpolymer material, calixarene derivative (hexaacetate p‐methnylcalix[6]arene) was tested as a high‐resolution negative resist under an electron beam lithography process It showed under 10‐mm resolution with little side roughness and high durability to halide plasma etching A sub‐10‐nm Ge quantum wire was perfectly etched off without defects Such a performance is suitable for nanoscale device processes

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Journal ArticleDOI

Organic materials for electronic and optoelectronic devices

TL;DR: In this paper, the synthesis, properties, functions and potential applications for electronic and optoelectronic devices of photo-and electro-active organic materials are discussed, including amorphous molecular materials, titanyl phthalocyanine, oligothiophenes with well-defined structures, and non-conjugated polymers containing pendant oligothophenes or other π-electron systems.
Journal ArticleDOI

Directed assembly of block copolymer blends into nonregular device-oriented structures.

TL;DR: Ternary blends of diblock copolymers and homopolymers that naturally form periodic arrays are directed to assemble into nonregular device-oriented structures on chemically nanopatterned substrates for defect-free assembly in locations where the domain dimensions deviate substantially from those formed in the bulk.
Journal ArticleDOI

Photo- and electroactive amorphous molecular materials—molecular design, syntheses, reactions, properties, and applications

TL;DR: In this article, the recent progress of studies on photo-and electroactive amorphous molecular materials, highlighting photochromic amorphus molecular materials and their use in organic EL devices is discussed.
Journal ArticleDOI

Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

TL;DR: This work investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope and achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist.
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