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Molecular Glass Resists for High-Resolution Patterning

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TLDR
In this paper, a series of photoresists constructed from glass-forming, low-molecular-weight organic compounds, also known as molecular glasses, were designed and synthesized for study in advanced lithography.
Abstract
This paper describes a series of photoresists constructed from glass-forming, low-molecular-weight organic compounds, also known as molecular glasses Compared with traditional polymeric resists, molecular glass resists are composed of smaller and more-uniform molecular building blocks In this work, both positive-tone and negative-tone molecular glass photoresists with a range of core structures were designed and synthesized for study in advanced lithography These molecular glass resists have asymmetric, rigid cores, which is important for producing glassy materials with glass transition temperatures substantially above room temperature For positive-tone molecular glass photoresists, amorphous films could be obtained by partial protection of the core structure Images were produced using photoacid-generator-catalyzed deprotection chemistry Amorphous negative-tone resists were obtained by mixing molecular glass core structures with another minor resist component such as a photo cross-linker It was sho

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Citations
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Journal ArticleDOI

Nanoscale Three-Dimensional Patterning of Molecular Resists by Scanning Probes

TL;DR: A scanning probe lithography method based on the local desorption of a glassy organic resist by a heatable probe is presented and demonstrated at a half pitch down to 15 nanometers without proximity corrections and with throughputs approaching those of Gaussian electron beam lithography at similar resolution.
Journal ArticleDOI

Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes

TL;DR: This work carries out detailed experimental and theoretical studies to reveal all of the essential attributes of the underlying thermophysical phenomena and demonstrates use of the purified arrays in transistors that achieve mobilities exceeding 1,000 cm(2) V(-1) s (-1) and on/off switching ratios of ∼10,000 with current outputs in the milliamp range.
Journal ArticleDOI

Extreme ultraviolet resist materials for sub-7 nm patterning

TL;DR: Advances in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform and development strategies and the challenges in next generationresist materials are summarized and discussed.
Journal ArticleDOI

Molecular Glass Resists as High‐Resolution Patterning Materials

TL;DR: In this article, the chemical and structural aspects of MGs as well as important concepts of MG resist design are discussed. And the authors highlight some of the recent advances in high-resolution patterning capabilities with next-generation imaging tools.
Journal ArticleDOI

Stable Holographic Gratings with Small-Molecular Trisazobenzene Derivatives

TL;DR: These nonpolymeric, azobenzene-containing compounds presented in this work appear to be attractive candidates for fabrication of stable holographic volume gratings.
References
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Journal ArticleDOI

Chemical amplification in the design of dry developing resist materials

TL;DR: In this article, a new resist system is described which undergoes spontaneous relief image formation, formulated from end capped poly(phthaladehyde), PPA, and a cationic photoinitiator such as a diaryliodonium or triarylsulfonium metal halide.
Journal ArticleDOI

Ultrahigh resolution of calixarene negative resist in electron beam lithography

TL;DR: In this paper, a nonpolymer material, calixarene derivative (hexaacetate p‐methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process.
Journal ArticleDOI

A Model for Antiplasticization in Polystyrene

TL;DR: In this article, flexural tests of polystyrene/mineral oil blends conducted at room temperature showed that antiplasticization is molecular weight dependent, thus supporting a hypothesis that the phenomenon can be attributed to a chain-end effect.
Journal ArticleDOI

Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films

TL;DR: In this article, the authors have observed granular structures with a diameter of 20-30 nm in resist films, and have determined that these structures cause the linewidth fluctuations.
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