Journal ArticleDOI
Warm electrons in polar semiconductors
D. Chattopadhyay,B. R. Nag +1 more
TLDR
In this paper, a method based on an interactive solution of the Boltzmann equation is presented for the calculation of the warm electron coefficient beta in polar semiconductors, where the effect of electron-electron collisions is incorporated by using a Maxwellian energy distribution function for the carriers.Abstract:
A method based on an interactive solution of the Boltzmann equation is presented for the calculation of the warm electron coefficient beta in polar semiconductors. The effect of electron-electron collisions is incorporated by using a Maxwellian energy distribution function for the carriers. With the aid of the method the warm-electron coefficients in InAs, InSb, InP and Hg0.8Cd0.2Te are computed taking account of all the relevant scattering mechanisms. The effects of band nonparabolicity, p-function admixture and electron screening are included in the calculations. The sensitivity of beta on the choice of the scattering parameters is studied and the available experimental data are analysed in the light of the calculated values. Agreement between theory and experiment is found to be satisfactory in the case of InAs only.read more
Citations
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Journal ArticleDOI
Application of a new high field quantum magneto-transport theory for polar semiconductors
F. Beleznay,M. Serényi +1 more
TL;DR: In this article, a high-field quantum magnetotransport theory based on Feynman's Path Integral method has been derived and the first approximation gives implicite relations between applied field and drift velocity of electrons in magnetic field.
Journal ArticleDOI
Comparative studies on the electronic transport in magnetically quantized low band gap semiconductor system
S. Shrestha,Chandan Kumar Sarkar +1 more
TL;DR: In this paper, the authors compared the effect of band structures on the various transport properties of MCT such as mobility, Seebeck coefficient, thermal conductivity, figure of merit (Z) etc.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
Journal ArticleDOI
Electron Mobility in Direct-Gap Polar Semiconductors
TL;DR: In this paper, the drift mobilities of the five direct-gap III-V semiconductors GaAs, GaSb, InP, InAs, and InSb are presented as a function of temperature.
Journal ArticleDOI
Electron Transport in InSb, InAs, and InP
TL;DR: In this paper, the electron-transport properties of direct-gap semiconductors have been generalized to include arbitrary electron degeneracy as well as scattering by ionized impurities and heavy holes.
Journal ArticleDOI
High-Field Transport in n- Type GaAs
E. M. Conwell,M. O. Vassell +1 more
TL;DR: In this article, the electron distributions were solved for the coupled Boltzmann equations of the GaAs under a set of approximations that are fair for fields around the beginning of the negative-differential-resistance region, but should be quite good at higher fields.
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