Amorphous silicon band to band transition
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The band-to-band transition in amorphous silicon plays a crucial role in various applications, including photovoltaic devices and electronic components. Research has shown that the band alignment between amorphous silicon and other materials, such as transition metal oxides, is essential for device performance. Additionally, studies have investigated the impact of ion implantation on the transition from crystalline to amorphous silicon, revealing changes in the optical and microstructural properties. Furthermore, the concept of intermediate-band silicon, created by introducing light transition elements into silicon, has been explored for enhancing the bandgap and creating partially occupied electronic bands within the material. Understanding these transitions and alignments is crucial for optimizing the efficiency and functionality of amorphous silicon-based devices.
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137 Citations | The band alignment between (100)Si and complex rare earth/transition metal oxides shows a band gap width of 5.6-5.7 eV, with conduction band offset at 2.0 eV and valence band offset at 2.5 eV. |
19 May 2019 2 Citations | Not addressed in the paper. |
| The amorphous silicon band-to-band transition is influenced by the c-Si/a-SiO2 interface atomic structure, impacting band alignment in electronic applications. | |
41 Citations | The amorphous silicon band-to-band transition is characterized by a distinct shift from crystalline to amorphous phase, affecting optical properties and band structure evolution with increasing ion fluence. |
| The paper discusses creating an intermediate band in silicon materials, including amorphous types, through light transition element inclusions, enabling band-to-band transitions for various applications in photovoltaics and photonics. |
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