How can the mobility of BCE-type amorphous InGaZnO TFTs be enhanced using triple-layer channels?
The mobility of BCE-type amorphous InGaZnO TFTs can be enhanced using triple-layer channels. The triple-layer TFT consists of a top barrier and a bottom barrier deposited with oxygen flow (OF) and an a-IGZO main channel deposited without OF in between . The conduction band difference between the barrier layers and the main channel helps confine the carriers in the main channel, resulting in higher electron mobilities for the bottom gate (BG) operation compared to single-layer and double-layer channel TFTs . The bottom barrier reduces Coulomb scattering and surface roughness scattering, while the top barrier mitigates plasma-induced damage in the channel and the bottom barrier . The triple-layer TFTs also demonstrate better reliability under positive bias stress and negative bias illumination stress compared to single-layer and double-layer TFTs .
Answers from top 5 papers
| Papers (5) | Insight |
|---|---|
| The provided paper is not about BCE-type amorphous InGaZnO TFTs, so there is no information on how the mobility of these TFTs can be enhanced using triple-layer channels. | |
| The provided paper is not about BCE-type amorphous InGaZnO TFTs or triple-layer channels. | |
| The provided paper does not mention anything about enhancing the mobility of BCE-type amorphous InGaZnO TFTs using triple-layer channels. | |
| The provided paper does not discuss the use of triple-layer channels to enhance the mobility of BCE-type amorphous InGaZnO TFTs. | |
| The mobility of BCE-type amorphous InGaZnO TFTs can be enhanced using triple-layer channels by reducing Coulomb scattering and surface roughness scattering, and mitigating plasma-induced damage. |