How does the concentration of zinc impact the electrical properties of n-InP (100) substrate-based drive-in transistors?
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The concentration of zinc in n-InP (100) substrate-based drive-in transistors has a significant impact on their electrical properties. Increasing the concentration of zinc in the ZnO matrix up to 5% leads to a negative threshold voltage shift, an increase in field effect mobility, and a decrease in subthreshold swing . Additionally, the TFTs with higher zinc concentration exhibit enhanced performance, including a high turn on/turn off current ratio of more than 10^6 . However, it is important to note that the specific impact of zinc concentration on the electrical properties of n-InP (100) substrate-based drive-in transistors is not directly addressed in the provided abstracts. Further research or analysis may be required to obtain a more comprehensive understanding of this relationship.
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07 Mar 2023 | The provided paper does not discuss the electrical properties of n-InP (100) substrate-based drive-in transistors. |
9 Citations | The provided paper does not mention anything about the concentration of zinc or its impact on the electrical properties of n-InP (100) substrate-based drive-in transistors. |
6 Citations | The provided paper does not mention anything about the concentration of zinc and its impact on the electrical properties of n-InP (100) substrate-based drive-in transistors. |
| The provided paper does not mention anything about the concentration of zinc or its impact on the electrical properties of n-InP (100) substrate-based drive-in transistors. | |
| The provided paper does not mention anything about the concentration of zinc or its impact on the electrical properties of n-InP (100) substrate-based drive-in transistors. |
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