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Journal ArticleDOI
Motofumi Suzuki, Yasunori Taga 
76 Citations
Therefore, shape-related physical anisotropies and the chemical activity due to high porosity can be integrated in one thin film, making it applicable to devices such as solar cells and chemical sensors.
The method seems attractive for high-performance and quasi single-crystal thin-film devices, which include thin-film transistors, silicon-on-insulator-based ULSIs, solar-cells and porous Si photonic devices.
The presented studies may provide useful information to understand thin-film devices based on tin oxide and gallium oxide semiconductors.
Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc.
Thin-film compound semiconductor optoelectronic devices are comparable to, and, in some cases, better than, their on-wafer counterparts.
Although many challenges still remain before optical thin films are used widely as waveguides, modern thin film technology is beginning to provide the to...
Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles.
These findings further the understanding of the physics of thin-film interfaces, which can stimulate the improvement of devices.
This enhances the processability of such films, which is an important aspect for the fabrication of thin-film devices.
Furthermore, due to compactness, better performance and reliability coupled with low cost production, thin film devices and components are preferred over their bulk counterparts.

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