What is TC amplifier?
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| Papers (9) | Insight |
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| To our knowledge, this is the first CMOS power amplifier that covers the whole W-band. | |
| It also improves the CMRR of the amplifier. | |
1 Citations | This novel amplifier is capable of synthesising an arbitrary TC including the ideal rectifier transfer characteristic, which is highly desirable for analogue circuits such as power amplifiers, low-noise amplifiers, mixers, op-amps, instrumentation amplifiers etc. |
13 Citations | To the authors' knowledge, this is the highest proven bandwidth of a broadband amplifier in TS technology. |
01 Jun 1992 17 Citations | The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. |
42 Citations | Applications as an amplifier and a nonvolatile storage cell are possible, and a device based on high Tc materials has promise. |
64 Citations | This paper presents an overview of amplifier theory, and shows that many novel amplifier architectures are simply implementations of earlier theories which have been made possible by advances in process technology. |
78 Citations | It is also suitable for analyzing the amplifier in a system environment. |
01 Aug 2017 17 Citations | Proposed amplifier delivers an appreciably enhanced performance over that of existing technique. |
Related Questions
Literature reviews on how does an amplifier works?3 answersAn amplifier is a device that increases the amplitude of an input signal to produce a larger output signal. Different types of amplifiers have been developed using various technologies such as Complementary to Metal Oxide Semiconductor (CMOS), Gallium Nitride Monolithic Microwave integrated circuit (GaN MMIC), Gallium Nitride high electron mobility transistor Doherty (GaN HEMT Doherty), Aluminum Gallium Nitride (AlGaN), high electron-mobility transistor (HEMT), Gallium Nitride Metal Semiconductor Field Effect Transistor (GaN MESFET), Silicon Carbide Metal Semiconductor Field Effect Transistor (SiC MESFET), BiCMOS, Metal Oxide Semiconductor (MOS), BiFET, and Gallium Arsenide Pseudomorphic (GaAsP) HEMT. These amplifiers have been used in various applications such as Global System for Mobile Communications (GSM), Enhanced data for global evolution (EDGE), successive approximation, analog-to-digital converter (ADC), flash analog-to-digital converter (ADC), comparator, voltage-controlled oscillator (VCO), and mixer circuits. However, existing literature on power amplifiers has identified several issues that need to be addressed. The amplifier structure typically consists of a voltage source, first amplifying unit, and second amplifying unit. The first amplifying unit amplifies the input signals to generate a first amplified signal, while the second amplifying unit amplifies the input signals to generate a second amplified signal. The output signal is then generated based on the first and second amplified signals. An amplifier also includes a biasing unit, amplifying unit, and Schmitt trigger. The biasing unit generates a bias current independent of the power supply to increase power supply rejection ratio. The amplifying unit receives an input voltage and generates an amplified voltage based on the biasing current. The Schmitt trigger generates and outputs a modified voltage. An amplifier circuit consists of a first series circuit, a second series circuit, and an amplifier stage. The first series circuit includes a current source, a first tap, and a first component configured as a diode. The second series circuit includes a controlled path between a first connection and a second connection of a first transistor and a second tap. The amplifier stage is coupled to the second tap to set the operating point of the amplifier stage.
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