Showing papers on "Diborane published in 1988"
TL;DR: In this paper, a neutral Boron pyrazole species would likely exist in a polymeric structure and thus would be related to B-poly(1-pyrazolyl) pyrazaboles.
Abstract: : The present study was based on the assumption that a neutral Boron Pyrazole species would likely exist in a polymeric structure. Therefore, it should contain the bridging Boron Pyrazole units typical for pyrazaboles but also terminal B bonded Pyrazole groups and thus would be related to B-poly(1-pyrazolyl)pyrazaboles. Furthermore, a (pz)3B-B(pz)3 ion should be similar to a RB(pz)3 ion but for the fact that the former has two polydentate sites. These possibilities should provide for interesting variations as compared to the chemistry of B-(1-pyrazolyl)pyrazaboles and poly(1-pyrazolyl)borates, respectively. Keywords: tetrakis(1-pyrazolyl)dibor ane(4), (monomer, oligomers), bis(pyrazole)-tetrakis(1-pyrazolyl)diborane(4), hexakis(1-pyrazolyl)diborane(4) ate complexes.
60 citations
TL;DR: In this article, a mixture of diborane and silane was used for in situ boron-doped polysilicon deposition over a temperature range of 450 - 600C, and a diboreane/silane flow rate varying from 0.002 to 0.02.
Abstract: The deposition of in situ boron-doped polysilicon from a mixture of diborane and silane was studied over a temperature range of 450 - 600C, and a diborane/silane flow rate varying from 0.002 to 0.02. Diborane enhances the deposition rate and suppresses the activation energy of the deposition reaction. Diborane also reduces the temperature of the amorphous/polycrystalline transition. Resistivity after annealing (650 or 900C) decreases with increasing diborane flow and with decreasing deposition temperature. Minimum resistivity is obtained by depositing the silicon as an amorphous film and annealing at high temperature (greater than or equal to900C). Of particular importance to low thermal budget processes, however, is the low resistivity (3.0 m -cm) obtained by annealing an initially amorphous film at 650C.
33 citations
Patent•
18 Mar 1988TL;DR: Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyls such as nickel carbonyl, and diborane as mentioned in this paper.
Abstract: Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.
25 citations
TL;DR: In this paper, the growth forms and structures of boron films prepared in B 2 H 6 +H 2 +He discharge at substrate temperatures ( T s ) of 850 to 970°C were studied.
19 citations
TL;DR: In this article, boron ions were successfully doped into crystalline silicon substrates using AC(20 kHz)-biased microwave electron cyclotron resonance plasma, as functions of microwave power and AC bias power.
Abstract: Boron ions have been successfully doped into crystalline silicon substrates using AC(20 kHz)-biased microwave electron cyclotron resonance plasma, as functions of microwave power and AC bias power. Diborane gas diluted with hydrogen was used as a gas source. A sheet resistance of 10100 kΩ/\Box, junction depth of 0.1 µm and boron concentration at the silicon surface of 1018 atoms/cm3 were attained using this technique.
14 citations
TL;DR: In this paper, the authors assigned the ArF 193 nm laser photolysis of diborane to new transitions of BH2 and BH3, and observed the rotationally very cold BH-3 transition.
14 citations
14 citations
TL;DR: Amorphous carbon films were investigated for X-ray mask substrate applications as mentioned in this paper, where the films were deposited by r.f. plasma chemical vapour deposition from a methane-hydrogen mixture.
10 citations
TL;DR: In this article, the authors used laser photolysis of diborane and laser-induced fluorescence of BH to measure rate constants for BH+NO reactions at total pressures near 1 Torr, over the temperature range 250-350 K.
9 citations
TL;DR: In this article, the electrical conductivity and the optical gap of amorphous silicon nitride have been determined as a function of the volume ratio of ammonia to silane mixtures.
Abstract: Doped films of amorphous silicon nitride have been prepared by the glow-discharge technique over a wide range of ammonia-silane mixtures. Phosphorus- and boron-doped specimens were produced by admixing measured amounts of phosphine or diborane during deposition. Interstitial doping of specimens was attempted with sodium by ion-beam implantation, and with lithium by evaporation and in-diffusion. The electrical conductivity and the optical gap of these specimens have been determined as a function of the volume ratio of ammonia to silane. All four dopants raise the conductivity of low-nitrogen-content specimens to about 10-2ω-1cm-1 at room temperature, without changing the optical gap. With increasing nitrogen content the effect of phosphorus, boron and sodium doping decreases rapidly. In contrast, incorporation of lithium significantly increases the room-temperature conductivity of even high-nitrogen-content films. By careful control of the preparation conditions, near-stoichiometric, optically tra...
5 citations
TL;DR: In this paper, 1,10-disubstituted 1,4,7,10,13,16-hexaazacyclooctadecanes (hexaaza-18crowns) having lipophilic groups were synthesized from 1,2-ethanediamine as a starting material.
Abstract: 1,10-Disubstituted 1,4,7,10,13,16-hexaazacyclooctadecanes (hexaaza-18-crowns) having lipophilic groups were synthesized from 1,2-ethanediamine as a starting material. Cyclization of 3,6-ditosyl-3,6-diazaoctanedioyl dichloride and 3,6-ditosyl-3,6-diazaoctane-1,8-diamine under the high dilution conditions, followed by diborane reduction of the amide carbonyl, gave the macrocyclic precursor. A series of reactions, i.e., acylation, diborane reduction, and detosylation, afforded 1,10-disubstituted hexaaza-18-crowns. Their extractability for metal cations was examined by spectrophotometric analysis. They showed relatively high extractability for Ag+, Zn2+, and Cd2+.
Patent•
27 Sep 1988
TL;DR: In this paper, the authors proposed a method to obtain the three-layered structure of a metal, graphite and BN without requiring a heat-treating step under a high pressure, by forming highly oriented graphite film on a deposition forming substrate consisting of an iron family element (containing alloy) by chemical vapor deposition method and subsequently forming a highly crystalline hexagonal BN.
Abstract: PURPOSE:To obtain the titled BN having three-layered structure of a metal, graphite and BN without requiring a heat-treating step under a high pressure, by forming highly oriented graphite film on a deposition forming substrate consisting of an iron family element (containing alloy) by a chemical vapor deposition method and subsequently forming a highly crystalline hexagonal BN. CONSTITUTION:Ar gas is fed from an Ar gas control system 2 into a bubbling vessel 1 containing a hydrocarbon compound, such as benzene, controlled to 0.1-8.0mmol. feed rate of the hydrocarbon compound, accompanied therewith, feed into a quartz reaction tube 4, having a heating furnace 8 on the outer peripheral surface and containing a sample carrier 7 carrying an iron family element (containing element), such as Ni, which is a deposition forming substrate, heated at 500-1,600 deg.C and thermally decomposed by a chemical vapor deposition method to synthesize a highly oriented graphite film on the substrate. The interior of the reaction tube 4 is then replaced with Ar gas and a boron compound, such as diborane gas, and NH3 at respectively controlled flow rates in 1:0.5-5vol. ratio are introduced from a boron compound control system 11 and NH3 gas control system 12 into the reaction tube 4 and thermally decomposed at 700-1,800 deg.C on the above-mentioned graphite film to synthesize and deposit BN.
Patent•
15 Jul 1988
TL;DR: In this paper, a stable amorphous BN film without deteriorating light transmittance under the conditions where a tensile residual stress is applied by using an org. nitrogen compd. and diborane as the gaseous reactants in the reduced-pressure CVD method was obtained.
Abstract: PURPOSE: To obtain a stable amorphous BN film without deteriorating light transmittance under the conditions where a tensile residual stress is applied by using an org. nitrogen compd. and diborane as the gaseous reactants in the reduced-pressure CVD method. CONSTITUTION: Diborane (B 2 H 6 ) and an org. nitrogen compd. are used as the gaseous reactants, and an amorphous BN film is produced by the reduced- pressure CVD method. As the org. compd., CH 3 NH 2 , C 2 H 5 NH 2 , (CH 3 ) 2 NH, (CH 3 ) 3 N, CH 3 CN, CH 2 CHCN, (CH 3 ) 3 N, CH 3 NH 2 , (CH 3 ) 2 (NH) 2 , HCN, etc., are exemplified. The reaction temp. is appropriately controlled to 400W750°C. The ratio of CH 3 NH 2 to B 2 H 6 is preferably controlled to 2W30, when CH 3 NH 2 is used as the org. nitrogen compd. The amorphous BN film consists ordinarily of 50W60wt.% B and the balance N and C. COPYRIGHT: (C)1989,JPO&Japio
Patent•
06 Apr 1988
TL;DR: In this paper, a thin film of amorphous boron hydride is made by coating a susceptor and an electrode made of a metal with alumina, which can reduce the generation of minute powder when an X-ray membrane is formed by plasma CVD.
Abstract: PURPOSE:To enable reducing the generation of minute powder when an X-ray membrane is formed by plasma CVD by coating a susceptor and an electrode made of a metal with alumina. CONSTITUTION:Plasma chemical vapor growth equipment appropriate tor forming a thin film of amorphous boron hydride : nitride or boron hydride : nitride carbide is made by coating a susceptor 2 and an electrode 1 made of a metal with alumina 5. Por example, the aluminum susceptor 2 is made facing the aluminum electrode 1, a raw material gas is supplied to the electrode 1, the gas is made plasma in the electrode 1 by applying high-frequency voltage and is discharged toward the susceptor 2, an alumina sintering plate is stuck to the electrode 1 and the susceptor 2 and the external surfaces are coated. A silicon water 3 is mounted on the susceptor 2, heated by a heater 4, a mixed gas of diborane, ammonia and methane diluted with argon is introduced and an amorphous boron hydride : nitride carbide thin film is formed on a silicon wafer 3 by applying high-frequency voltage.
TL;DR: In this paper, the performance of rf-sputtered a-sixGe1−x:H (x = 0.70) films at a constant substrate temperature of 200°C was investigated.
Abstract: Doping of rf-sputtered a-SixGe1−x:H (x = 0.70) films at a constant substrate temperature of 200°C is investigated. Controlled amounts of phosphine and diborane enabled us to vary the conductivity by about two orders of magnitude for the n-type material and about one order of magnitude for p-type material. Thermoelectric power measurements confirmed that electrons and holes were predominant in the conduction process for phosphorus and boron doped samples, respectively. The optical gap does not change upon doping except in the case of high boron concentration (3 mTorr) for which a decrease of 0.05 eV is observed and an enhancement of absorption for lower energies can be detected.
Patent•
18 Feb 1988
TL;DR: In this article, a-SiGeX film with a sensitivity and charging characteristic sufficient for a long wavelength light used for an electrophotographic sensitive member for a laser printer was obtained by specifying the pressure at the time of forming a film, the dilute amount of hydrogen and/or helium and a substrate temperature.
Abstract: PURPOSE: To obtain an a-SiGeX film having a sensitivity and charging characteristic sufficient for a long wavelength light used for an electrophotographic sensitive member for a laser printer by specifying the pressure at the time of forming a film, the dilute amount of hydrogen and/or helium and a substrate temperature. CONSTITUTION:Pressure at the time of forming a film is set to 1 Torr or less, the dilute flow rate ratio of hydrogen and/or helium to the total flow rate of silane gas and germane gas is set to a range of 0.3-3.0, and a substrate temperature is set to a range of 280-350 deg.C. Fine amounts of elements, such as B, C, O, N are further doped to provide characteristics as a photosensitive member in an a-SiGeX film within a range of the above-mentioned three film forming conditions. Dopant is supplied as gas, such as diborane (B2H6), methane (CH4), nitrogen suboxide (N2O, carbon dioxide or ammonia, and these gases are preferably used by diluting them with hydrogen and/or helium.
Patent•
16 Nov 1988
TL;DR: In this article, a thin II-Vl compound film which contains N-type impurity in high concentration and preferable surface state on a crystalline substrate by employing boron as doping element was manufactured.
Abstract: PURPOSE:To manufacture a thin II-Vl compound film which contains N-type impurity in high concentration and preferable surface state on a crystalline substrate by employing boron as doping element. CONSTITUTION:Boron of doping element can be supplied in any form, but diborane (B2H6) is preferable. For example, hydrogen gas, H2Se gas diluted with hydrogen gas in 10% concentration and diborane gas diluted with hydrogen gas in 1000ppm concentration are respectively fed at predetermined flow rates from group VI element material gas inlet 5 at 250 deg.C of a GaAs substrate, and hydrogen gas, hydrogen gas mixed with bubbler containing dimethyl zinc held at -20 deg.C are fed from group II element material gas inlet 4 to supply hydrogen gas-diluted dimethyl zinc saturated with dimethyl zinc. A substrate is held under the condition to obtain a thin ZnSe film of mirror surface doped with boron in concentration of 5X10 cm on the GaAs substrate.
TL;DR: In this paper, the photolytic effect enhances the incorporation of the dopant species and obtained high surface concentration and ultrashallow junctions of 5×10 20 cm −3 and 0.1 µm, respectively.
Abstract: Boron doping of single crystal silicon using an argon fluoride excimer laser with diborane gas has been performed. Diborane gas has an absorption at 193nm, which leads to gas phase photodecomposition of the diborane. Utilizing the photolyic effect, we obtained high surface concentration and ultrashallow junctions of 5×10 20 cm −3 and 0.1 µm, respectively. The photolytic effect enhances the incorporation of the dopant species.
TL;DR: In this article, 1,10-disubstituted 1,4,7,10,13,16-hexaazacyclooctadecanes (hexaaza-18crowns) having lipophilic groups were synthesized from 1,2-ethanediamine as a starting material.
Abstract: 1,10-Disubstituted 1,4,7,10,13,16-hexaazacyclooctadecanes (hexaaza-18-crowns) having lipophilic groups were synthesized from 1,2-ethanediamine as a starting material. Cyclization of 3,6-ditosyl-3,6-diazaoctanedioyl dichloride and 3,6-ditosyl-3,6-diazaoctane-1,8-diamine under the high dilution conditions, followed by diborane reduction of the amide carbonyl, gave the macrocyclic precursor. A series of reactions, i.e., acylation, diborane reduction, and detosylation, afforded 1,10-disubstituted hexaaza-18-crowns. Their extractability for metal cations was examined by spectrophotometric analysis. They showed relatively high extractability for Ag+, Zn2+, and Cd2+.
TL;DR: In this article, a neutral Boron pyrazole species would likely exist in a polymeric structure and thus would be related to B-poly(1-pyrazolyl) pyrazaboles.
Abstract: : The present study was based on the assumption that a neutral Boron Pyrazole species would likely exist in a polymeric structure. Therefore, it should contain the bridging Boron Pyrazole units typical for pyrazaboles but also terminal B bonded Pyrazole groups and thus would be related to B-poly(1-pyrazolyl)pyrazaboles. Furthermore, a (pz)3B-B(pz)3 ion should be similar to a RB(pz)3 ion but for the fact that the former has two polydentate sites. These possibilities should provide for interesting variations as compared to the chemistry of B-(1-pyrazolyl)pyrazaboles and poly(1-pyrazolyl)borates, respectively. Keywords: tetrakis(1-pyrazolyl)dibor ane(4), (monomer, oligomers), bis(pyrazole)-tetrakis(1-pyrazolyl)diborane(4), hexakis(1-pyrazolyl)diborane(4) ate complexes.