Showing papers on "Electronic packaging published in 1984"

The VLSI Package-An Analytical Review

Abstract: Current very large-scale integrated (VLSI) chip packaging options, with a special emphasis on the various size and chip I/O complexity issues are reviewed, quantitatively. The two basic packaging options reviewed are the hermetic chip carrier (HCC) and the pin grid array (PGA). The impact that chip input/output (I/O) has on the "size" growth of packages as single chip enclosures, as well as that of the chips themselves, is considered. It is shown that the HCC is inherently more area-efficient for almost any high I/O configured VLSI chip, especially if the chip size growth that must be anticipated is considered as I/O's of 400 arc entertained. After quantitative considerations of discrete packaging options are exhausted, it is finally recommended that a multicbip VLSI module should be seriously considered as a more efficient packaging concept. This, however, requires some innovation directed toward the development of adequate prepackaged chip testing. This could be facilitated through the incorporation of physically testable I/O ports on the "passivated" VLSI chip; e.g., flip chip "bumps," tape-automated bonding (TAB), or beam lead chip interconnects.

Thermal Expansion Mismatch in Electronic Packaging

Abstract: Thermal expansion mismatch causes serious problems in operating device reliability because of the various stresses imposed on the joint materials undergoing temperature changes. Silicon has a low expansion coefficient so strain buffers are often employed between the silicon and the outer metal covers with relatively high expansion coefficients. These buffers can be metals like molybdenum, ceramics like alumina, or a brush structure of copper, with soft solders at the joints. However, solders themselves have finite fatigue lives which can be estimated from material and dimensional data.

New Packaging Strategy to Reduce System Costs

Abstract: Packaging density for mid-sized computers, personal computers, and other cost-performance equipment has been limited by the need to use available interface or "glue" circuit chips. This makes the system and circuit boards DIP dominated, with a continuing lower circuit density than achieved by bigger main frame systems. Using the percent active silicon area yardstick, various multichip package strengths are explored, showing that there is an increase in board efficiency for easily achievable package constructions that are possible with open plastic premolded packages. Packages are shown that demonstrate that this approach is available whenever the systems manufacturers and the integrated circuit (IC) houses decide to set up the necessary standard packages.

AT-Cut Strip Resonators Enclosed in Cylindrical Package

Abstract: Summary Miniaturization of the electronic components leads miniaturization of the electronic equipment, such as clock:,video tape recorders and their cameras This is the recent tendency. To meet such demands from the market, chip type resistors and capacitors or high integrated IC have been developed. Among these chip type components, sometimes, crystal requires the biggest area on the print circuit board. Therefore, strong demands for miniaturization of the crystal have been increasing.

Monolithic microwave integrated circuits: Interconnections and packaging considerations

Abstract: Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

Recent advances in device processing and packaging of high-power pulsed GaAs double-drift IMPATT's at X-band

Abstract: High-power multimesa GaAs hybrid double-drift IMPATT's have been developed for pulsed operation at X-band. The diodes are fabricated from GaAs material grown by a novel "infinite" solution liquid phase epitaxial process. The use of specialized rapid thermal processing and packaging techniques has enabled the fabrication of high-power IMPATT oscillators that have delivered peak output powers of over 40 W with 20-percent efficiency under pulsed RF operation at X-band frequencies. The diodes are constructed with an integral heat sink and bounded with a Au-Sn eutectic solder in a microwave package.