Showing papers on "Ion beam deposition published in 1970"
TL;DR: In this paper, a retarding potential difference ion source was used to study charge transfer reactions in the Cermak-Herman mode of ion source operation, where the primary positive ion beam traverses the ion box and is collected on the trap, while the secondary ions are collected through the analysis slit with high efficiency.
54 citations
TL;DR: In this article, a new ion source was described, which produces slow ion beams of I+> 10−2 A cm−2 with extraction voltages Vextr ≳ 102 V and a relatively small spread.
Abstract: A new ion source is described, which produces slow ion beams of I+> 10−2 A cm−2 with extraction voltages Vextr ≳ 102 V and a relatively small spread.
41 citations
37 citations
Patent•
09 Apr 1970
TL;DR: In this paper, an ion microprobe is combined with an electron beam generator which emits a parallel beam of electrons to a second uniform 180* magnetic field, which places the electron beam coaxially with the ion beam, to provide for simultaneous or selective irradiation of the same spot on a test sample by ions or electrons.
Abstract: An ion lens (12) is located between an ion source (10) and the magnetic sector field of an ion microprobe apparatus, the ion lens having its input focal plane in the region in which the ion beam emitted by the ion source has its smallest cross section, the magnetic sector field being a uniform homogeneous 180* magnetic field in which the ions emitted from the ion lens (12) as parallel bundles are first deflected by 90*, then passed through an aperture for selection of ions of predetermined mass, and again deflected by 90*, to be emitted as parallel bundles of ions of preselected mass. The microprobe may be combined with an electron beam generator which emits a parallel beam of electrons to a second uniform 180* magnetic field, which places the electron beam coaxially with the ion beam. The ion beam passes through a portion of this second magnetic field in a region which is of insufficient field strength to deflect the ion beam, to provide for simultaneous, or selective irradiation of the same spot on a test sample by ions or electrons. Lenses for simultaneous focusing of ions and electrons (FIG. 2) includes a pair of pole shoes with a magnetic field therebetween and a nonmagnetic electrode located between the pole shoes and energized with respect to the pole shoes to provide for combined magnetic and electrical action on the ion, and/or electron beam.
18 citations
Patent•
13 Apr 1970TL;DR: In this paper, the performance of a time-of-flight mass spectrometer is improved by applying a step voltage to the deflection plates to produce a step function-controlled electrical field perpendicular to the ion beam.
Abstract: The performance of a time-of-flight mass spectrometer is improved by applying a step voltage to the deflection plates to produce a step-function-controlled electrical field perpendicular to the ion beam. The step-function-controlled field provides ion bunching wherein the number of ions in each packet is independent of mass and the resolution is independent of mass resulting in a sensitivity that is independent of mass.
18 citations
TL;DR: In this article, a combination of electron beam and ion beam techniques were used in conjunction with conventional planar technology to fabricate a junction field effect microwave switch, which was used to expose mask patterns in polymethyl methacrylate resist whose line widths (≤1 um) are inaccessible to conventional photolithography.
Abstract: A combination of electron beam and ion beam techniques were used in conjunction with conventional planar technology to fabricate a junction field-effect microwave switch. A digital tape-controlled scanning electron beam was used to expose mask patterns in polymethyl methacrylate resist whose line widths (≤1 um) are inaccessible to conventional photolithography; ion beam sputtering was used to remove a thin gold undercoat from within the exposed patterns, thereby maintaining the good edge resolution; and ion implantation was used to dope the closely spaced interdigitated source and drain regions thus exposed by the preceding process steps in the gold contact mask.
16 citations
Patent•
19 Oct 1970
TL;DR: Ion scattering spectrometer for elemental analysis comprising an ion generator, an energy analyzer, an ion detector, an indicating apparatus and a closed-loop feed-back device for neutralizing an electrically nonconductive target.
Abstract: Ion scattering spectrometer for elemental analysis comprising an ion generator, an energy analyzer, an ion detector, an indicating apparatus and a closed-loop feed-back device for neutralizing an electrically non-conductive target
13 citations
12 citations
TL;DR: In this article, a capillary ion source using surface ionization of lithium on rhenium was constructed, and the life span of the source was only limited by the capacity of the lithium reservoir.
Abstract: We have constructed a capillary ion source using the surface ionization of lithium on rhenium. Currents of 400 μA during 300 h, or 100 μA during 1000 h, can be obtained; the life span of the source is only limited by the capacity of the lithium reservoir.
11 citations
TL;DR: In this paper, STEIGMAN, W. A. ANDREWS and S. DUSHMAN discuss radioactive tracers in physical Metallurgy and their role in the discovery of radioactive trace.
Abstract: References 1. J . STEIGMAN, W. S I tOCKL E Y, and r. c. NIX, Phys. Rev. 56 (1939) 13. 2. c. LEYMONIE, \"Radioactive Tracers in Physical Metallurgy\". (J. Wiley and Sons, Inc., New York, 1963), pp. 54, 57. 3. T. J. RENOOF, Phil. Mag. 8 (1964) 781. 4. G. C. K U C Z Y N S K I and R. J. L A N D A U E R , J. AppL Phys. 22 (1951) 952. 5. A. ANDREWS and s. DUSHMAN, 3\". Phys. Chem. 29 (1925) 462. 6. a. GOLDSTEIN, Rev. Sci. Instr. 28 (1957) 289. 7. C. E. G R O U T H A M E L a n d c . E. J O H N S O N , Analyt. Chem. 26 (1954) 1284. 8. c. P. BtrHSM~R, Ph.D. Thesis, State University of New York, College of Ceramics, Alfred, NY (1968).
10 citations
TL;DR: In this paper, an ion accelerator was described that delivers magnetically separated ion currents of 0.1-20 μA at 5 eV-10 keV energy into targets of 5 mm2.
Abstract: An ion accelerator is described that delivers magnetically separated ion currents of 0.1–20 μA at 5 eV–10 keV energy into targets of 5 mm2. An electrostatic decelerator in front of the target permits continuous lowering of the ion energy to ca. 5 eV. The accelerator has been used mainly for the production of 14C+ ion beams from 14CO2 for the study of the hot atom chemistry of carbon in solid benzene. The ion source is of all metal construction and is a straight capillary arc type. It delivers C+ currents of approximately 2 μA, obtained at 0.2–0.5% efficiency from the 14CO2 source gas.
TL;DR: In this paper, an electron impact ion source suitable for use with a quadrupole mass filter is described, where ion formation occurs throughout a relatively large volume since no magnetic field collimation of the ionization electron stream is used.
Abstract: An electron impact ion source suitable for use with a quadrupole mass filter is described. Ion formation occurs throughout a relatively large volume since no magnetic field collimation of the ionization electron stream is used. A sensitivity of 8 Torr−1 was obtained for an ion energy of 50 eV rising to a constant sensitivity of 12 Torr−1 for ion energies in excess of 250 eV. Trajectory tracing has been used to give some insight into the efficient operation of the ion source.
Patent•
15 Oct 1970TL;DR: In this paper, the authors present a source for a SPUTTERING APPARATUS COMPRISING AN OPEN CYLINDER in which at one end a FILAMENT CATHODE is ARRANGED, WHICH SCREENED by two SCREening PLATES at right angles to the AXIS.
Abstract: AN ION SOURCE FOR A SPUTTERING APPARATUS COMPRISING AN OPEN CYLINDER IN WHICH AT ONE END A FILAMENT CATHODE IS ARRANGED, WHICH SCREENED BY TWO SCREENING PLATES AT RIGHT ANGLES TO THE AXIS. AN AXIAL MAGNETIC FIELD IN THE ANODE OF A FEW HUNDRED GAUSS BRINGS ABOUT A LOW BURNING VOLTAGE OF ABOUT 30 TO 40 V.
TL;DR: In this paper, positive ions can be trapped by electron space charge fields in the ion-source of a mass spectrometer, resulting in electron-ion collision sequences, with high electron current density.
Abstract: Positive ions can be trapped by electron space–charge fields in the ion-source of a mass spectrometer resulting in electron–ion collision sequences. With high electron current density (~0.5 A cm−2)...
TL;DR: In this paper, the dependence of performance of an aperiodic rf mass spectrometer on various factors, such as the initial energy spread from the ion source itself, thermal energy spread of the ion beam, space charge effect in the analyzer as well as in the ion sources, microoptics of analyzer grids, inaccurate alignment of the analyzers configuration, and shape, strength, and stability of the modulating signal upon the mass spectrum line shape and hence the resolving power of the Bennett type rf Mass Spectrometer has been investigated.
Abstract: This paper discusses the dependence of performance of an aperiodic rf mass spectrometer on various factors. The influence of (a) initial energy spread from the ion source itself, (b) thermal energy spread of the ion beam, (c) space‐charge effect in the analyzer as well as in the ion source, (d) microoptics of the analyzer grids, (e) inaccurate alignment of the analyzer configuration, and (f) shape, strength, and stability of the modulating signal upon the mass‐spectrum line shape and hence the resolving power of the Bennett type rf mass spectrometer has been investigated. The solution of the energy modulating function has been determined using an I.B.M. computer 1620 and the maximum permissible inaccuracies in the stage separations are determined.
TL;DR: In this article, a description of the two contrary processes of multiply-charged ion production and their possible superpositions which take place in gas discharge ion sources is given and three different types of ion sources are compared, each of which is inherently related to one of these production processes in respect to its discharge parameters.
Journal Article•
TL;DR: In this article, a large electromagnetic analyzer has been designed and constructed having three distinct ion trajectories within a single set of pole pieces, including a Mattauch-Herzog type mass spectrometer, a Cascade Spectrometer and an 80°, 84 cm radius sector.
TL;DR: In this paper, the behavior of He + and Ne + ion beams, extracted by a duoplasmatron ion source, is studied as a function of the gas pressure and the arc current in the source.
TL;DR: In this article, an ion beam system and instrumentation used in studies of the ejection of electrons associated with the Auger neutralization of N2+, H2+, and N+ ions in the energy range 10 −30 eV under controlled surface conditions.
Abstract: A detailed description is given of an ion beam system and instrumentation used in studies of the ejection of electrons associated with the Auger neutralization of N2+, H2+, and N+ ions in the energy range 10–30 eV under controlled surface conditions. Ions are generated in a low pressure discharge, electrostatically focused and mass analyzed by a refocusing magnetic spectrometer to remove undesired ion, neutral, and metastable species. The ion kinetic energy spread is low (approximately 0.4 eV at half‐maximum) and the beam intensity is as high as 10−8 A. The combination of ultrahigh vacuum techniques to lengthen the time required to reach adsorption equilibrium after flashing, and special guarding and analog data reduction techniques to reduce instrumentation time response, permitted the study of transient adsorption effects as well as the more usual equilibrium studies.
TL;DR: In this paper, the use of compound semiconductors in a modified Hill and Nelson sputtering ion source was described, and compared with other methods of using this source to produce ions for the implantation of semiconductor devices.
01 Jan 1970
TL;DR: Ion implantation (a form of doping) is an integral part of integrated circuit manufacturing as mentioned in this paper, and it has become the dominant method of semiconductor doping in the last half of the 20th century.
Abstract: Ion implantation (a form of doping) is an integral part of integrated circuit manufacturing. Pioneered in the first half of the 20th century, this technology has become the dominant method of semiconductor doping. As the complexity of chips has grown, so has the number of implant steps. Today, a complementary metal oxide semiconductor (CMOS) integrated circuit with embedded memory may require up to 60 implants (Figure 1)
TL;DR: In this article, a charge exchange in the field-free region between the source and the electric sector of a Mattauch-Herzog mass spectrometer can be observed at the detector by operating the instrument at a reduced ion accelerating voltage.