Showing papers on "Memristor published in 2008"
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Abstract: Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.
8,971 citations
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Abstract: Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the ‘memristor’ (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron–ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance. Nanoscale metal/oxide/metal devices that are capable of fast non-volatile switching have been built from platinum and titanium dioxide. The devices could have applications in ultrahigh density memory cells and novel forms of computing.
2,744 citations
TL;DR: In this paper, the properties of a single memristor, as well as ideal memristors in series and parallel, are presented, and simple models are presented which show that these unusual properties are closely related to the internal dynamics of the Memristor's internal dynamics.
Abstract: We present a tutorial on the properties of the new ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux $\phi$ in a circuit, and complements a resistor R, a capacitor C, and an inductor L as an ingredient of ideal electrical circuits. The properties of these three elements and their circuits are a part of the standard curricula. The existence of the memristor as the fourth ideal circuit element was predicted in 1971 based on symmetry arguments, but was clearly experimentally demonstrated just this year. We present the properties of a single memristor, memristors in series and parallel, as well as ideal memristor-capacitor (MC), memristor-inductor (ML), and memristor-capacitor-inductor (MCL) circuits. We find that the memristor has hysteretic current-voltage characteristics. We show that the ideal MC (ML) circuit undergoes non-exponential charge (current) decay with two time-scales, and that by switching the polarity of the capacitor, an ideal MCL circuit can be tuned from overdamped to underdamped. We present simple models which show that these unusual properties are closely related to the memristor's internal dynamics. This tutorial complements the pedagogy of ideal circuit elements (R,C, and L) and the properties of their circuits.
722 citations
TL;DR: A memristor is a two-terminal memory resistor whose resistance depends on the voltage applied to it and the length of time that voltage has been applied as discussed by the authors, i.e., when the voltage is turned off, the memory resistor remembers its most recent resistance until the next time it is turned on.
Abstract: This article discusses the development of a memristor and how it works. A memristor is a contraction of a memory resistor and is a two-terminal device whose resistance depends on the voltage applied to it and the length of time that voltage has been applied. This device remembers its history, that is, when you turn off the voltage, the memristor remembers its most recent resistance until the next time you turn it on.
661 citations
TL;DR: In this paper, a system whose memristive behavior is based entirely on the electron-spin degree of freedom is discussed, which allows for a more convenient control than the ionic transport in nanostructures.
Abstract: Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behavior. Our scheme is fundamentally different from previously discussed schemes of memristive systems and broadens the possible range of applications of semiconductor spintronics.
219 citations
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TL;DR: In this paper, the fabrication and properties of a polymeric memristor with memory of its previous history are reported, which can be used as a critical node in adaptive networks capable of bio-inspired intelligent signal processing.
Abstract: We report the fabrication and properties of a polymeric memristor, i.e. an electronic element with memory of its previous history. We show how this element can be viewed as a functional analog of a synaptic junction and how it can be used as a critical node in adaptive networks capable of bioinspired intelligent signal processing.
54 citations
14 Sep 2008
TL;DR: It is proposed to combine such memristors with operational amplifier circuitry and fixed resistor elements so as to form a programmable signal processor capable of selective transmission and multiplexing of multiple signals for applications in communications and programmable drive waveform control.
Abstract: Recently researchers at Hewlett-Packard have announced the discovery of a new material having resistance switching characteristics and which has been characterized as a fourth fundamental circuit component called the “memristor”[1] It is proposed to combine such memristors with operational amplifier circuitry and fixed resistor elements so as to form a programmable signal processor capable of selective transmission and multiplexing of multiple signals for applications in communications and programmable drive waveform control
52 citations
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TL;DR: Using basic algebra and simple calculus, the analytical solution to the memristor model of Strukov et al. as mentioned in this paper was derived using Lissajous figures of current responding to a sinusoidal voltage.
Abstract: Using basic algebra and simple calculus, the analytical solution to the memristor model of Strukov et al published in Nature is derived. Lissajous figures of current responding to a sinusoidal voltage are presented.
47 citations
01 Jan 2008
TL;DR: The memristor is a two-terminal circuit element characterized by a relationship between the charge q(t) s St% i(7J d7 and the flux-linkage as discussed by the authors.
Abstract: A new two-terminal circuit element-called the memrirtorcharacterized by a relationship between the charge q(t) s St% i(7J d7 and the flux-linkage (p(t) = J-‘-m vfrj d T is introduced os the fourth boric circuit element An electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell’s equations is presented Many circuit~theoretic properties of memdstorr are derived It is shown that this element exhibiis some peculiar behavior different from that exhibited by resistors, inductors, or capacitors These properties lead to a number of unique applications which cannot be realized with RLC networks alone I + ” -3 nl Although a physical memristor device without internal power supply has not yet been discovered, operational laboratory models have been built with the help of active circuits Experimental results ore presented to demonstrate the properties and potential applications of memristors (a) I 1NTR00~cnoN I + Y -3 T HIS PAPER presents the logical and scientific basis for the existence of a new two-terminal circuit element called the memristor (a contraction for memory (b) resistor) which has every right to be as basic as the three classical circuit elements already in existence, namely, the resistor, inductor, and capacitor Although the existence of a memristor in the form of a physical device without internal power supply has not yet been discovered, its laboratory realization in the form of active circuits will be presented in Section II’ Many interesting circuit-theoretic properties possessed by the memristor, the most important of which is perhaps the passivity property which provides the circuit-theoretic basis for its physical realizability, will be derived in Section III An electromagnetic field interpretation of the memristor characterization will be presented in Section IV with the help of a quasi-static expansion of Maxwell’s equations Finally, some novel applications of memristors will be presented in Section V 1 + ” -3
43 citations
TL;DR: In this article, the effect of resistive switching on the transition process in heterocontacts based on strongly correlated electron systems (SCES) has been analyzed, and it has been shown that the process is asymmetric with respect to switching into “on” and “off” states, the switching time is controlled by a voltage level, this time can be less than microseconds, on the other hand, relaxation processes can reach tens seconds.
26 citations
TL;DR: The memristor was discovered by Leon Chua and the example Chua set for younger generations of scientists and engineers is described in this paper, where the authors recall Chua's discovery and its example.
Abstract: Recounts Leon Chua's discovery of the memristor and the example Chua set for younger generations of scientists and engineers.
TL;DR: In this article, a basic electronic component predicted mathematically almost 40 years ago has finally turned up, and it was shown that it can be used in a modern electronic component, such as a transceiver.
Posted Content•
25 Jul 2008
TL;DR: In this paper, the properties of a single memristor, as well as ideal memristors in series and parallel, are presented, and simple models are presented which show that these unusual properties are closely related to the internal dynamics of the Memristor's internal dynamics.
Abstract: We present a tutorial on the properties of the new ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux $\phi$ in a circuit, and complements a resistor R, a capacitor C, and an inductor L as an ingredient of ideal electrical circuits. The properties of these three elements and their circuits are a part of the standard curricula. The existence of the memristor as the fourth ideal circuit element was predicted in 1971 based on symmetry arguments, but was clearly experimentally demonstrated just this year. We present the properties of a single memristor, memristors in series and parallel, as well as ideal memristor-capacitor (MC), memristor-inductor (ML), and memristor-capacitor-inductor (MCL) circuits. We find that the memristor has hysteretic current-voltage characteristics. We show that the ideal MC (ML) circuit undergoes non-exponential charge (current) decay with two time-scales, and that by switching the polarity of the capacitor, an ideal MCL circuit can be tuned from overdamped to underdamped. We present simple models which show that these unusual properties are closely related to the memristor's internal dynamics. This tutorial complements the pedagogy of ideal circuit elements (R,C, and L) and the properties of their circuits.
TL;DR: The memristor concept gives a simple explanation for many puzzling voltage-current characteristics in nanoscale electronics and HP is promising prototypes of ultradense memory chips in 2009.
Abstract: Many nanostructures exhibit electrically stimulated change of resistance and have been proposed as the basis for non-volatile random access memories (NVRAM), but progress toward implementation has been delayed by difficulties in understanding and controlling the resistive switching phenomena [1]. To design a device that can be reliably used for information processing, one needs (i) a mathematically consistent theory for modeling the circuit component, and (ii) knowledge of the underlying operating principles so that one might improve a device by fine tuning parameters such as doping and geometrical profile. Recent breakthrough occurred at Hewlett-Packard Laboratories has been receiving increasing attention in both fundamental researches and commercial applications. In May 2008, HP scientists announced the discovery of the missing circuit element memristor, acronym for memory resistor. The memristor concept gives a simple explanation for many puzzling voltage-current characteristics in nanoscale electronics [2]. Researchers also clarified coupled electron-ion dynamics responsible for memristive switch [3]. With the reported advance, HP is promising prototypes of ultradense memory chips in 2009.
12 Nov 2008
TL;DR: In this paper, the memristor was shown to be the missing fourth basic circuit element in electronics, which has attracted much attention from the media and has generated wildest possible speculations on future applications in new non-volatile memory devices with human brain synthesizing properties.
Abstract: Earlier this year HP Lab engineers announced their physical realization of the ‘missing’ fourth basic circuit element in electronics: the memristor. Not often a technological discovery attracted so much attention from the media. Apart from the wildest possible speculations on future applications in new non-volatile memory devices with human brain synthesizing properties and suggestions to rewrite the existing textbooks on circuit theory, the discovery met with much scepticism as well. What exactly is this memristor? Where does it come from? What will it bring us? Why didn’t we miss it before?