Showing papers on "Quantum capacitance published in 2001"
TL;DR: In this paper, the capacitance-voltage characteristics of an optically excited wide quantum well were studied and both self-consistent simulations and experimental results showed the striking quantum contribution to the capacitive near zero bias which was ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up.
Abstract: We have studied the capacitance-voltage characteristics of an optically excited wide quantum well. Both self-consistent simulations and experimental results show the striking quantum contribution to the capacitance near zero bias which is ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up. This quantum capacitance feature is regarded as an electrical manifestation of the quantum-confined Stark effect.
6 citations
TL;DR: In this article, the photoexcited capacitancevoltage (C-V) characteristics as well as the photoluminescence spectra under different biases of a wide quantum well (QW) embedded in an n(+)-i-n(+) double-barrier structure were investigated.
Abstract: We have investigated the photo-excited capacitance-voltage (C-V) characteristics as well as the photoluminescence spectra under different biases of a wide quantum well (QW) embedded in an n(+)-i-n(+) double-barrier structure. The pronounced peak feature at zero bias in the C-V spectrum observed upon illumination is regarded as a kind of quantum capacitance related to the quantum confined Stark effect, originating from the spatial separation of the photo-generated electron and hole gas in the QW. This fact is further demonstrated through the comparison between the C-V curve with the PL intensity versus applied voltage relationship under the same excitation. The results may provide us with a more direct and sensitive means in the detection of the separation and accumulation of both types of free carriers-electrons and holes-in low-dimensional semiconductor structures, especially in a new type of optical memory cell.
6 citations
25 Jun 2001
TL;DR: In this paper, a simple analytic model is developed to generate an accurate sweep of the C-V curve from the oxide field, and the quantum mechanical effects are intrinsically included in the estimation of the subband energies.
Abstract: A simple explicit analytic model is developed to generate an accurate sweep of the C-V curve from the oxide field. The quantum mechanical effects are intrinsically included in the estimation of the subband energies. Neither the substrate potential nor the polysilicon potential are pinned at any arbitrary value. So far only NMOS devices have been explicitly treated; the model will be extended to PMOS devices in the future. Work is also ongoing to allow band-bending and capacitance to be calculated directly as a function of voltage.
2 citations
11 Sep 2001
TL;DR: In this paper, the authors presented arsenic and phosphorus co-implant as a highly effective and manufacturable way to reduce gate depletion, series resistance and junction parasitics in deep submicron technologies.
Abstract: This paper presents arsenic and phosphorus co-implant as a highly effective and manufacturable way to reduce gate depletion, series resistance and junction parasitics in deep submicron technologies.
1 citations
11 Sep 2001
TL;DR: In this article, the authors derived an equivalent resistance capacitance (RC)-circuit from the balance of charge within a quantum dot flash memory capacitor structure and derived the corresponding R,C values and the charging time for each state of the dots have been determined in a GaAs/AlGaAs heterostructure.
Abstract: From the balance of charge within a quantum dot flash memory capacitor structure we have derived an equivalent resistance capacitance (RC)-circuit. Quantum effects are included in the RC-circuit by a “quantum capacitance”. Using frequency dependent capacitance spectroscopy the corresponding R,C values and the charging time for each state of the dots have been determined in a GaAs/AlGaAs heterostructure.
14 May 2001
TL;DR: In this paper, an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs) is presented, which takes into account the features of the carrier transport in LJPD and their geometry.
Abstract: We present an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs) which takes into account the features of the carrier transport in LJPDs and their geometry. These features ensure short transit times and a low capacitance. The developed model is used to calculate the LJPD characteristics as functions of the signal frequency, bias voltage and structural parameters.