A
Abhishek K. Singh
Researcher at Indian Institute of Science
Publications - 389
Citations - 9883
Abhishek K. Singh is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Medicine & Band gap. The author has an hindex of 44, co-authored 321 publications receiving 7354 citations. Previous affiliations of Abhishek K. Singh include University of California, Santa Barbara & Tata Institute of Fundamental Research.
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Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
Avinash P. Nayak,Swastibrata Bhattacharyya,Jie Zhu,Jin Liu,Xiang Wu,Tribhuwan Pandey,Changqing Jin,Abhishek K. Singh,Deji Akinwande,Jung-Fu Lin +9 more
TL;DR: This work reports comprehensive studies on the pressure-dependent electronic, vibrational, optical and structural properties of multilayered molybdenum disulphide up to 35 GPa and reveals a structural lattice distortion followed by an electronic transition from a semiconducting to metallic state.
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Sources of electrical conductivity in SnO2.
TL;DR: It is found that SnO2 offers excellent prospects for p-type doping by incorporation of acceptors on the Sn site and specific strategies for optimizing acceptor incorporation are presented.
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Pressure-dependent optical and vibrational properties of monolayer molybdenum disulfide.
Avinash P. Nayak,Tribhuwan Pandey,Damien Voiry,Jin Liu,Samuel T. Moran,Ankit Sharma,Cheng Tan,Chang-Hsiao Chen,Lain-Jong Li,Manish Chhowalla,Jung-Fu Lin,Abhishek K. Singh,Deji Akinwande +12 more
TL;DR: The results present an important advance toward controlling the band structure and optoelectronic properties of monolayer MoS2 via pressure, which has vital implications for enhanced device applications.
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Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides
TL;DR: In this paper, the band gap of bilayer sheets of semiconducting transition-metal dichalcogenides (TMDs) can be reduced by applying vertical compressive pressure.
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Electronics and magnetism of patterned graphene nanoroads.
TL;DR: This work explores, using density functional theory, an alternative possibility of "nanoroads" of pristine graphene being carved in the electrically insulating matrix of fully hydrogenated carbon sheet (graphane).