A
Adrian Powell
Researcher at Cree Inc.
Publications - 93
Citations - 2916
Adrian Powell is an academic researcher from Cree Inc.. The author has contributed to research in topics: Silicon carbide & Wafer. The author has an hindex of 31, co-authored 93 publications receiving 2808 citations. Previous affiliations of Adrian Powell include IBM.
Papers
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Journal ArticleDOI
SiC materials-progress, status, and potential roadblocks
Adrian Powell,Larry B. Rowland +1 more
TL;DR: The properties of SiC are reviewed, the current status of substrate and epitaxial growth is assessed, and the expectations for SiC in the future are outlined.
Journal ArticleDOI
New approach to the growth of low dislocation relaxed SiGe material
TL;DR: In this paper, the SiGe epitaxial layer relaxes without the generation of threading dislocations in the upper SiGe material, which appeared dislocation free to the limit of the cross sectional transmission electron microscopy analysis.
Patent
Production of substrate for tensilely strained semiconductor
TL;DR: In this article, a strain relief mechanism was proposed to create tensile strain in the SiGe buffer layer without the generation of threading dislocations within the siGe layer, which is achieved by depositing SiGe on an SOI substrate with a superficial silicon thickness.
Journal ArticleDOI
Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry
Thomas E. Tiwald,John A. Woollam,Stefan Zollner,Jim Christiansen,Rich Gregory,T. Wetteroth,Syd R. Wilson,Adrian Powell +7 more
TL;DR: In this article, the dielectric function of bulk nitrogen-doped 4H and 6H SiC substrates was measured using Fourier transform infrared spectroscopic ellipsometry.
Journal ArticleDOI
Surface roughening in ion implanted 4H-silicon carbide
Michael A. Capano,Sei-Hyung Ryu,J.A. Cooper,Nils Nordell,Adrian Powell,D. E. Walker,Michael R. Melloch,K. Rottner,Sigbritt Karlsson +8 more
TL;DR: In this article, the authors examined the causes and possible solutions to surface roughening of implanted and annealed 4H-SiC ion implant using atomic force microscopy.