Journal ArticleDOI
New approach to the growth of low dislocation relaxed SiGe material
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In this paper, the SiGe epitaxial layer relaxes without the generation of threading dislocations in the upper SiGe material, which appeared dislocation free to the limit of the cross sectional transmission electron microscopy analysis.Abstract:
In this growth process a new strain relief mechanism operates, whereby the SiGe epitaxial layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an ultrathin silicon on insulator (SOI) substrate with a superficial silicon thickness less than the SiGe layer thickness. Initially, the thin Si layer is put under tension due to an equalization of the strain between the Si and SiGe layers. Thereafter, the strain created in the thin Si layer relaxes by plastic deformation. Since the dislocations are formed and glide in the thin Si layer, no threading dislocation is ever introduced in to the upper SiGe material, which appeared dislocation free to the limit of the cross sectional transmission electron microscopy analysis. We thus have a method for producing very low dislocation, relaxes SiGe films with the additional benefit of an SOI substrate.read more
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High-mobility Si and Ge structures
TL;DR: In this article, the structural and electronic properties of lattice-mismatched Si/SiGe heterostructures are discussed in terms of scattering mechanisms and experimental results, and an assessment of the possible role of such heterodevices in future microelectronic circuits is given.
Journal ArticleDOI
Semiconductor wafer bonding
Ulrich Gösele,Q. Y. Tong +1 more
TL;DR: Wafer bonding allows a new degree of freedom in design and fabrication of material combinations that previously would have been excluded because these material combinations cannot be realized by the conventional approach of epitaxial growth.
Journal ArticleDOI
Beyond the conventional transistor
TL;DR: In this paper, the authors focus on approaches to continue CMOS scaling by introducing new device structures and new materials, including high-dielectric-constant (high-k) gate dielectric, metal gate electrode, double-gate FET and strained-silicon FET.
Journal ArticleDOI
Si/SiGe heterostructures: from material and physics to devices and circuits
TL;DR: In this paper, the authors present a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system, in particular, the important device technologies in mainstream microelectronics.
Journal ArticleDOI
Si/Ge nanostructures
TL;DR: In this article, a review of Si/Ge nanostructures that have been synthesized by self-assembling and self-ordering during heteroepitaxy of \mbox{silicon-germanium} alloys on single-crystal silicon substrates is given.
References
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Journal ArticleDOI
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si / Si x Ge 1 − x Superlattices
TL;DR: The observation of two-dimensional electron systems and enhanced mobilities in Si/Ge strained-layer multilayer structures and the importance of the built-in strain in lowering the conduction band in Si is emphasized.
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Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
Y. J. Mii,Ya-Hong Xie,Eugene A. Fitzgerald,Don Monroe,F. A. Thiel,B. E. Weir,Leonard C. Feldman +6 more
TL;DR: In this paper, a modulation-doped Si/GexSi1−x structure was fabricated in which a thin Si layer was employed as the conduction channel for the two-dimensional electron gas.
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Structure, properties and applications of GexSi1-x strained layers and superlattices
TL;DR: The first successful pseudomorphic GexSi1-x-strained layers on Si were grown in Germany in 1975 and extensive work that has been done on the production, properties and application of gexSi 1-x strained layers and superlattices over the last fifteen years is described in this article.
Journal ArticleDOI
High electron mobility in modulation‐doped Si/SiGe
TL;DR: In this paper, a single-heterojunction n-type modulation-doped Si/SiGe structures with peak mobilities of 1800 cm2/V/V and 19.4 K were measured at room temperature.
Journal ArticleDOI
Stability of strained Si1−yCy random alloy layers
TL;DR: In this paper, the metastable critical thickness of the Si1−yCy alloys has been investigated and two distinct relaxation regimes for the strained layers were found, low and high mismatch regions where relaxation occurs by the creation of 60° dislocations and micro...