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Alessandro Trifiletti

Researcher at Sapienza University of Rome

Publications -  275
Citations -  3188

Alessandro Trifiletti is an academic researcher from Sapienza University of Rome. The author has contributed to research in topics: CMOS & Amplifier. The author has an hindex of 25, co-authored 260 publications receiving 2760 citations. Previous affiliations of Alessandro Trifiletti include STMicroelectronics.

Papers
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Proceedings ArticleDOI

A tree-like amplifier architecture for large gain-bandwidth product

TL;DR: It is shown that by using a single-ended to differential converter, the gain-bandwidth product of the tree-like amplifier is maximized with respect to tree structures based on simple differential pairs.
Proceedings ArticleDOI

A Novel Ultra-Low Voltage Fully Synthesizable Comparator exploiting NAND Gates

TL;DR: In this paper , a novel ultra-low voltage, ultra low power fully synthesizable comparator is presented, which exploits only 2-input NAND gates, that allow minimization of the area footprint and scalability up to extremely low supply voltages.
Proceedings ArticleDOI

Optimized design of source coupled logic gates in GaAs HEMT technology

TL;DR: The propagation delay model has been used to develop a design strategy that permits pencil-and-paper design of the gates, accounting for power-delay trade-off, in III-V HEMT technology.
Proceedings ArticleDOI

Feed array metrology and correction layer for large antenna systems in ASIC mixed signal technology

TL;DR: The paper deals with a possible use of the feed array present in a large antenna system, as a layer for measuring the antenna performance with a self-test procedure and a possible way to correct residual errors of the Antenna geometry and of the antenna distortions.
Journal ArticleDOI

Process and terminations variations aware stability criteria for microwave amplifiers

TL;DR: Two novel process variations aware, necessary and sufficient conditions suitable for implementation in CAD optimizers are proposed to check amplifiers stability, showing that the new criteria allow robust amplifier design, under variation of active device immittance parameters in pre‐specified rectangular regions, due to manufacturing tolerances.