Thomas C. Oh

TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.

TL;DR: In this article, the authors report the state-of-the-art performance of deep-submicrometer gate length dual-gate and cascode GaN HEMTs with $10-times reduction in gate-to-drain feedback capacitance.

TL;DR: In this article, a novel GaN heterojunction field effect transistor (HOFET) was reported, which has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 Ωmm), enhancement-mode operation (VTH=+0.35 V), and excellent high-frequency performance (fT/fmax=50/120 GHz).

TL;DR: In this paper, a novel asymmetric field plate structure utilizing a slanted field plate (FP) engineered to appropriately distribute the electric field on GaN high-electron mobility transistors (HEMTs) scaled for low-loss, high-speed power switch applications is discussed.

TL;DR: A high-speed, track-and-hold amplifier and interleaved CMOS sample- and-hold circuit are implemented in an InP-on-CMOS fabrication process, yielding higher performance circuits at lower power consumption and a novel HBT buffer with feedback is demonstrated to offer high linearity and low power.