John F. Robinson

TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.

TL;DR: In this article, a novel GaN heterojunction field effect transistor (HOFET) was reported, which has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 Ωmm), enhancement-mode operation (VTH=+0.35 V), and excellent high-frequency performance (fT/fmax=50/120 GHz).

TL;DR: In this paper, a novel asymmetric field plate structure utilizing a slanted field plate (FP) engineered to appropriately distribute the electric field on GaN high-electron mobility transistors (HEMTs) scaled for low-loss, high-speed power switch applications is discussed.

TL;DR: In this paper, a 40-nm gate-length E/D inverter with logic-low and logic-high noise margins of 0.465 and 1.59 V, respectively, and a logic voltage swing of 2.38 V measured at Vdd = 2.5 V is presented.

TL;DR: In this paper, a multilayer, low-parasitic interconnection scheme for highly scaled GaN high electron mobility transistors is reported, which offers three Au interconnects embedded in benzocyclobutene (BCB) dielectric, with an integrated air-box in the active area in order to minimize the gate parasitic capacitances.