S. Kim

TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.

TL;DR: In this paper, the 1/f noise and phase noise performance of top-gated epitaxial graphene field effect transistors (FETs) in nonlinear circuit applications for the first time was presented.

TL;DR: In this article, the authors report record DC and RF performance in deeply scaled self-aligned gate (SAG) GaN-HEMTs operating in both depletionmode (D-mode) and enhancement-mode (E-mode).

TL;DR: In this article, the authors reported the first experimental observation of electron velocity enhancement by aggressive lateral scaling of GaN HEMTs, which achieved an extremely small on resistance of 0.44 Ω·mm, high maximum drain current density of 2.3 A/mm, and high peak extrinsic transconductance of 905 mS/mm.

TL;DR: In this paper, the authors report record DC and RF performance obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to two-dimensional electron gas (2DEG).