Robert G. Nagele

TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.

TL;DR: In this article, high-performing GaN MMICs that can cover broadband applications at W and D-band have been fabricated and tested, and a five stage 60-105 GHz LNA has >23 dB gain across the band and a six stage D-Band LNA with 25 dB of gain from 110-170 GHz.

TL;DR: The development of passive millimeter wave imaging sensors, operating at W band, that are currently being manufactured for commercial markets using standard automated assembly processes are described and performance improvements that can be expected for future imaging sensors are discussed.

TL;DR: In this paper, the authors present the development of compact UHF-band frequency sources capable of maintaining low phase noise for handheld portable systems using the quartz MEMS technology, and demonstrate a 635 MHz oscillator with -112 dBc/Hz phase noise at 1 kHz offset frequency.

TL;DR: In this article, the use of nonlinear dynamics for reducing oscillator phase noise at CMOS capable voltages and co-integration with more complex structures for sensing vibration and serving as a local timing reference for reducing thermally-induced sensor drifts is discussed.