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Ali Khakifirooz
Researcher at IBM
Publications - 526
Citations - 7736
Ali Khakifirooz is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Field-effect transistor. The author has an hindex of 38, co-authored 524 publications receiving 7584 citations. Previous affiliations of Ali Khakifirooz include GlobalFoundries & Massachusetts Institute of Technology.
Papers
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Journal ArticleDOI
A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters
TL;DR: In this article, a simple semi-empirical model ID(VGS, VDS) for short-channel MOSFETs applicable in all regions of device operation is presented.
Proceedings ArticleDOI
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
Kangguo Cheng,Ali Khakifirooz,Pranita Kulkarni,Shom Ponoth,J. Kuss,Davood Shahrjerdi,Lisa F. Edge,A. Kimball,S. Kanakasabapathy,K. Xiu,Stefan Schmitz,Alexander Reznicek,Thomas N. Adam,H. He,Nicolas Loubet,S. Holmes,Sanjay Mehta,D. Yang,A. Upham,Soon-Cheon Seo,J. L. Herman,R. Johnson,Yu Zhu,Paul C. Jamison,Bala S. Haran,Z. Zhu,L. H. Vanamurth,Su Chen Fan,D. Horak,Huiming Bu,Philip J. Oldiges,Devendra K. Sadana,P. Kozlowski,D. McHerron,James A. O’Neill,Bruce B. Doris +35 more
TL;DR: In this paper, the authors present a new ETSOI CMOS integration scheme that incorporates all benefits from their previous unipolar work, and demonstrate NFET and PFET drive currents of 640 and 490 µA/µm, respectively, at I off = 300 pA/m, V DD = 0.9V, and L G = 25nm.
Patent
High-k/metal gate cmos finfet with improved pfet threshold voltage
Veeraraghavan S. Basker,Kangguo Cheng,Bruce B. Doris,Johnathan E. Faltermeier,Ali Khakifirooz +4 more
TL;DR: In this paper, the donor material is epitaxially deposited on the exposed sidewalls of the fin structures, and then a condensation process is applied to move the donor materials through the sidewalls into the semiconductor material such that accommodation of the donors material causes a strain in the fin structure.
Patent
Integrated circuit with a thin body field effect transistor and capacitor
TL;DR: In this article, a dummy gate structure is formed on the first semiconductor layer in the transistor region, and a second-layer capacitor dielectric is formed in the second layer.
Journal ArticleDOI
Continuous MOSFET performance increase with device scaling: the role of strain and channel material innovations
TL;DR: Channel material innovations that will be required in order to maintain continued commensurate scaling beyond what can be achieved with process-induced strain are examined, and some of the technological tradeoffs that will have to be faced for their introduction are discussed.