Amol D. Gaidhane

TL;DR: This paper investigates how the NCFET technology can open the doors not only for the continuation of Moore's law, which is approaching its end, but also for reviving Dennard’s scaling, which stopped more than a decade ago.

TL;DR: In this paper, a surface potential-based continuous model for a metal-ferroelectric-insulator-semiconductor (MFIS) type gate-all-around negative capacitance transistor (GAA-NCFET) is proposed.

TL;DR: Results demonstrate that process variations have a larger impact on the processor’s performance in NC-FinFET – when it operates at a lower voltage compared to the baseline FinFET that still operates at the nominal high voltage – due to the additional ferroelectric-induced variability.

TL;DR: In this paper, the impact of negative capacitance field effect transistor (NCFET) on the performance of processors has been investigated, from physics all the way to full-chip (GDSII) level, under the impact that NC has on magnifying and compensating IR-drop.

TL;DR: In this paper, the issue of gate-induced drain-leakage (GIDL) in metal-ferroelectric-insulator-semiconductor (MFIS)-type negative capacitance fin field effect transistor (NC-FinFET) was analyzed using 3-D technology computer-aided design (TCAD) simulations.