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Andre K. Geim
Researcher at University of Manchester
Publications - 466
Citations - 232754
Andre K. Geim is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Magnetic field. The author has an hindex of 125, co-authored 445 publications receiving 206833 citations. Previous affiliations of Andre K. Geim include University of Nottingham & Russian Academy of Sciences.
Papers
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Barkhausen effect in a garnet film studied by ballistic hall micromagnetometry
TL;DR: In this article, the movement of a micrometer-size section of a single domain wall in a uniaxial garnet film was studied using a ballistic Hall micromagnetometer at 77 K and 4.2 K. The wall propagated in characteristic Barkhausen jumps, with the jump size distribution following the power-law relation.
Patent
Separation of water by pervaporation using a membrane
TL;DR: In this article, the use of graphene oxide on a porous support, and a membrane comprising these materials, is described, which can be used to separate components which would not survive the comparatively harsh conditions needed for distillation (high temp and/or low pressure).
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Optical suppression of ionized impurity scattering in vertical hot‐electron transport
TL;DR: A striking effect of illumination on the vertical nonequilibrium electron transport has been observed in the GaAs-based tunneling hot electron transfer amplifier (THETA) in this paper.
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The pinning potential at single flux vortices investigated using sub-micron hall probes
TL;DR: In this article, the authors used sub-micron Hall probes with an excellent combination of spatial and temporal resolution to image individual flux vortices in 200nm-thick superconducting Pb films.
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A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
E. E. Vdovin,Mark Greenaway,Yu. N. Khanin,Sergey V. Morozov,Oleg Makarovsky,Amalia Patanè,Artem Mishchenko,Sergey Slizovskiy,V. Fal’ko,Andre K. Geim,Kostya S. Novoselov,Laurence Eaves +11 more
TL;DR: In this paper , the authors show that when a single defect is present within the hexagonal boron nitride (hBN) tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene.