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Andre K. Geim

Researcher at University of Manchester

Publications -  466
Citations -  232754

Andre K. Geim is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Magnetic field. The author has an hindex of 125, co-authored 445 publications receiving 206833 citations. Previous affiliations of Andre K. Geim include University of Nottingham & Russian Academy of Sciences.

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Electronic phase separation in multilayer rhombohedral graphite

TL;DR: It is shown that the bulk electronic states in such rhombohedral graphite are gapped and, at low temperatures, electron transport is dominated by surface states, and spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation.
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Direct determination of the crystallographic orientation of graphene edges by atomic resolution imaging

TL;DR: In this article, high-resolution scanning tunneling microscopy (STM) imaging can be used to reveal that certain edges of micromechanically exfoliated single layer graphene crystals on silicon oxide follow either zigzag or armchair orientation.
Posted Content

Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride

TL;DR: Moiré superlattices generated by twisted insulating crystals of hexagonal boron nitride are shown to have a ferroelectric-like character, attributed to strain-induced polarized dipoles formed by pairs of interfacial bor on and nitrogen atoms that create bilayer-thick ferro electric domains.
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Unusual Suppression of the Superconducting Energy Gap and Critical Temperature in Atomically Thin NbSe2

TL;DR: Measurements of both the superconducting energy gap Δ and critical temperature TC in high-quality monocrystals of few-layer NbSe2 show a fully developed gap that rapidly reduces for devices with the number of layers N ≤ 5, as does their TC, and shows that the observed reduction cannot be explained by disorder.
Journal Article

Detecting topological currents in graphene superlattices

TL;DR: The authors measured the transport characteristics of the sample, which were consistent with the theoretical predictions for the VHE, and observed the long-range character of topological currents and their transistor-like control by means of gate voltage can be exploited for information processing based on valley degrees of freedom.