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Anthony K. Stamper
Researcher at GlobalFoundries
Publications - 355
Citations - 4860
Anthony K. Stamper is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Layer (electronics) & Copper interconnect. The author has an hindex of 32, co-authored 355 publications receiving 4843 citations. Previous affiliations of Anthony K. Stamper include IBM & Ultratech, Inc..
Papers
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Patent
Reduced electromigration and stressed induced migration of Cu wires by surface coating
TL;DR: In this paper, the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring is covered by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric.
Journal ArticleDOI
Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits
Donna R. Cote,Son V. Nguyen,Anthony K. Stamper,D. S. Armbrust,D. Tobben,R. A. Conti,G. Y. Lee +6 more
TL;DR: This paper focuses on the integration, process, and reliability requirements for dielectric films used for isolation, passivation, barrier, and antireflectivecoating applications in ultralargescale integrated (ULSI) semiconductor circuits.
Patent
Double-sided integrated circuit chips
Kerry Bernstein,Timothy J. Dalton,Jeffrey P. Gambino,Mark D. Jaffe,Paul D. Kartschoke,Stephen E. Luce,Anthony K. Stamper +6 more
TL;DR: A double-sided integrated circuit (DIN) as discussed by the authors is a type of integrated circuit where the backside silicon is removed from two silicon-on-insulator (SiOI) wafers and the contacts are formed in the upper wafer to devices in the lower wafer and wiring levels are formed on the upper Wafer.
Patent
A damascene copper wiring image sensor
TL;DR: In this paper, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path, and the etched opening is then refilled with a layer of either reflective or absorptive material.
Journal ArticleDOI
Reduced Cu interface diffusion by CoWP surface coating
Chao-Kun Hu,Lynne Gignac,Robert Rosenberg,Eric G. Liniger,Judith M. Rubino,Carlos J. Sambucetti,Anthony K. Stamper,A. Domenicucci,Xiaomeng Chen +8 more
TL;DR: In this article, a 10-nm thick selective electroless CoWP coating on the top surface of Cu dual damascene lines has been investigated and the grain structures of the lines embedded in SiLK semiconductor dielectric ranged from bamboo-like to polycrystalline.