J
Judith M. Rubino
Researcher at IBM
Publications - 21
Citations - 1141
Judith M. Rubino is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Electromigration. The author has an hindex of 13, co-authored 21 publications receiving 1130 citations.
Papers
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Journal ArticleDOI
Reduced electromigration of Cu wires by surface coating
Chao-Kun Hu,Lynne Gignac,Robert Rosenberg,Eric G. Liniger,Judith M. Rubino,Carlos J. Sambucetti,A. Domenicucci,Xiaomeng Chen,Anthony K. Stamper +8 more
TL;DR: In this article, a 10-20 nm thick metal cap was proposed to improve the lifetime of on-chip Cu damascene lines by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure.
Patent
Method for forming Co-W-P-Au films
Carlos J. Sambucetti,Judith M. Rubino,Daniel C. Edelstein,Cyryl Cabral,George Frederick Walker,John G. Gaudiello,Horatio S. Wildman +6 more
TL;DR: In this paper, a quaternary alloy film of Co-W-P-Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed.
Journal ArticleDOI
Reduced Cu interface diffusion by CoWP surface coating
Chao-Kun Hu,Lynne Gignac,Robert Rosenberg,Eric G. Liniger,Judith M. Rubino,Carlos J. Sambucetti,Anthony K. Stamper,A. Domenicucci,Xiaomeng Chen +8 more
TL;DR: In this article, a 10-nm thick selective electroless CoWP coating on the top surface of Cu dual damascene lines has been investigated and the grain structures of the lines embedded in SiLK semiconductor dielectric ranged from bamboo-like to polycrystalline.
Patent
Copper recess process with application to selective capping and electroless plating
Shyng-Tsong Chen,Timothy J. Dalton,Kenneth M. Davis,Chao-Kun Hu,Fen Fen Jamin,Steffen K. Kaldor,Mahadevaiyer Krishnan,Kaushik A. Kumar,Michael F. Lofaro,G Maruhotora Sandra,Chandrasekhar Narayan,David L. Rath,Judith M. Rubino,Katherine L. Saenger,Andrew H. Simon,Sean P. E. Smith,Wei-Tsu Tseng +16 more
TL;DR: In this paper, an integrated circuit structure is described that has a layer of logical and functional devices and an interconnection layer above the layer of logic and functional device, with a substrate, conductive features within the substrate and caps positioned only above the conductive feature.
Proceedings ArticleDOI
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
Chenming Hu,Donald F. Canaperi,Shyng-Tsong Chen,Lynne Gignac,B. Herbst,Steffen K. Kaldor,Mahadevaiyer Krishnan,Eric G. Liniger,David L. Rath,Darryl D. Restaino,Robert Rosenberg,Judith M. Rubino,Soon-Cheon Seo,A. Simon,Sean P. E. Smith,Wei-Tsu Tseng +15 more
TL;DR: In this paper, a CoWP or Ta/TaN cap on top of the Cu line surface significantly reduced interface diffusion and improved the electromigration lifetime when compared with lines capped with SiN/sub x/ or SiC/sub y/H/sub z/, respectively.