Ariane L. Beck

TL;DR: In this paper, the electrical and optical properties of photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition have been investigated, and it is shown that small-area devices exhibit stable gain with no evidence of microplasmas.

TL;DR: A review of the recent progress in APD technology can be found in this paper, where the authors present a survey of the most recent developments in III-V compound avalanche photodiodes (APDs).

TL;DR: In this article, the improved detectivity of AlxGa1−xN-based solar-blind p-i-n photodiodes with high zero-bias external quantum efficiency was reported.

TL;DR: In this paper, the authors describe the experimental and data collection methods for a large-scale smart grid deployment in Austin, Texas, and provide results based on those data as well as a possible positive correlation between energy use and some rebates.

TL;DR: In this article, ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes were shown to achieve an external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved.