Journal ArticleDOI
GaN avalanche photodiodes
J. C. Carrano,D. J. H. Lambert,C. J. Eiting,C. J. Collins,T. Li,S. Wang,B. Yang,Ariane L. Beck,Russell D. Dupuis,Joe C. Campbell +9 more
TLDR
In this paper, the electrical and optical properties of photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition have been investigated, and it is shown that small-area devices exhibit stable gain with no evidence of microplasmas.Abstract:
We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas.read more
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References
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Journal ArticleDOI
GaN Growth Using GaN Buffer Layer
TL;DR: In this paper, the authors used a GaN buffer layer on a sapphire substrate to obtain an optically flat and smooth surface for gallium nitride (GaN) films.
Journal ArticleDOI
High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
TL;DR: In this article, a photoconductive ultraviolet detector based on insulating single-crystal GaN was constructed using a switched atomic-layer-epitaxy process, which exhibited a linear behavior over five orders of incident optical power, thereby implying a very large dynamic range for these GaN-based ultraviolet sensors.
Journal ArticleDOI
Theory of Microplasma Instability in Silicon
TL;DR: In this paper, a statistical theory is presented to explain microplasma instability at the onset of avalanche in reversebiased silicon linearly graded and step junctions, and an expression is derived which relates the turnoff probability of the micro plasmas to the differential resistance of the diode in its conducting state and to other physically measurable diode parameters.
Journal ArticleDOI
Effect of Dislocations on Breakdown in Silicon p-n Junctions
A. G. Chynoweth,G. L. Pearson +1 more
TL;DR: In this paper, the light emission patterns of silicon diffused p-n junctions at breakdown were compared with the etch-pit patterns that reveal dislocations, and it was concluded that avalanche breakdown microplasmas occur preferentially where dislocation pass through the junction.
Journal ArticleDOI
Avalanche breakdown and breakdown luminescence in p-/spl pi/-n GaN diodes
TL;DR: In this paper, the authors report the observation of electric breakdown in graded p-/spl pi/-n GaN photodiodes, accompanied by microplasma formation, demonstrating a potential use of these devices as avalanche photododeddes (APDs).