S
S. Wang
Researcher at University of Texas at Austin
Publications - 21
Citations - 1194
S. Wang is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Avalanche photodiode & Single-photon avalanche diode. The author has an hindex of 12, co-authored 20 publications receiving 1157 citations.
Papers
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Journal ArticleDOI
GaN avalanche photodiodes
J. C. Carrano,D. J. H. Lambert,C. J. Eiting,C. J. Collins,T. Li,S. Wang,B. Yang,Ariane L. Beck,Russell D. Dupuis,Joe C. Campbell +9 more
TL;DR: In this paper, the electrical and optical properties of photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition have been investigated, and it is shown that small-area devices exhibit stable gain with no evidence of microplasmas.
Journal ArticleDOI
Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region
TL;DR: In this paper, a novel impact ionization-engineered multiplication region for avalanche photodiodes was presented. But the authors only considered the impact ionisation of the injected carrier type, while that of the feedback carrier type was suppressed.
Journal ArticleDOI
Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates
S. Wang,J.B. Hurst,R. Sidhu,X. Sun,Xiaoguang Zheng,Archie L. Holmes,A. Huntington,L.A. Coldren,Joe C. Campbell +8 more
TL;DR: In this paper, low noise multiplication region structures designed for avalanche photodiodes grown on InP substrates have been proposed for better control of spatial distribution of impact ionization for both injected and feedback carriers.
Journal ArticleDOI
Low dark current GaN avalanche photodiodes
B. Yang,T. Li,K. Heng,C. J. Collins,S. Wang,J. C. Carrano,Russell D. Dupuis,J. C. Campbell,Matthew J. Schurman,Ian T. Ferguson +9 more
TL;DR: In this article, the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition was described, and the photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm.
Journal ArticleDOI
Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode
Gauri Karve,S. Wang,Xiaowei Li,Joe C. Campbell,R. G. Ispasoiu,D.S. Bethune,W.P. Risk,Geoffrey S. Kinsey,J. C. Boisvert,T. D. Isshiki,R. Sudharsanan +10 more
TL;DR: In this article, the temperature dependence of the dark count rate was studied to understand its origin in In0.53Ga0.47As∕In0.52Al0.48As separate-absorption-charge-multiplication avalanche photodiodes.