This paper introduces McPAT, an integrated power, area, and timing modeling framework that supports comprehensive design space exploration for multicore and manycore processor configurations ranging from 90nm to 22nm and beyond. At the microarchitectural level, McPAT includes models for the fundamental components of a chip multiprocessor, including in-order and out-of-order processor cores, networks-on-chip, shared caches, integrated memory controllers, and multiple-domain clocking. At the circuit and technology levels, McPAT supports critical-path timing modeling, area modeling, and dynamic, short-circuit, and leakage power modeling for each of the device types forecast in the ITRS roadmap including bulk CMOS, SOI, and double-gate transistors. McPAT has a flexible XML interface to facilitate its use with many performance simulators. Combined with a performance simulator, McPAT enables architects to consistently quantify the cost of new ideas and assess tradeoffs of different architectures using new metrics like energy-delay-area2 product (EDA2P) and energy-delay-area product (EDAP). This paper explores the interconnect options of future manycore processors by varying the degree of clustering over generations of process technologies. Clustering will bring interesting tradeoffs between area and performance because the interconnects needed to group cores into clusters incur area overhead, but many applications can make good use of them due to synergies of cache sharing. Combining power, area, and timing results of McPAT with performance simulation of PARSEC benchmarks at the 22nm technology node for both common in-order and out-of-order manycore designs shows that when die cost is not taken into account clustering 8 cores together gives the best energy-delay product, whereas when cost is taken into account configuring clusters with 4 cores gives the best EDA2P and EDAP.

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McPAT: an integrated power, area, and timing modeling framework for multicore and manycore architectures

This review paper explores considerations for ultimate CMOS transistor scaling Transistor architectures such as extremely thin silicon-on-insulator and FinFET (and related architectures such as TriGate, Omega-FET, Pi-Gate), as well as nanowire device architectures, are compared and contrasted Key technology challenges (such as advanced gate stacks, mobility, resistance, and capacitance) shared by all of the architectures will be discussed in relation to recent research results

Considerations for Ultimate CMOS Scaling

A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

System comprising a semiconductor device and structure

A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.

Semiconductor device and structure

A method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a first metal layer overlaying the first transistors and providing at least one connection to the first transistors, then processing a second metal layer overlaying the first metal layer, then processing a second layer of second transistors overlaying the second metal layer, wherein the second metal layer is connected to provide power to at least one of the second transistors.

Method for fabrication of a semiconductor device and structure

Two key process features that are used to make 45 nm generation metal gate + high-k gate dielectric CMOS transistors are highlighted in this paper. The first feature is the integration of stress-enhancement techniques with the dual metal-gate + high-k transistors. The second feature is the extension of 193 nm dry lithography to the 45 nm technology node pitches. Use of these features has enabled industry-leading transistor performance and the first high volume 45 nm high-k + metal gate technology.

B. Norris

Papers

45nm High-k + metal gate strain-enhanced transistors