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Baikui Li
Researcher at Shenzhen University
Publications - 116
Citations - 2034
Baikui Li is an academic researcher from Shenzhen University. The author has contributed to research in topics: Schottky diode & Photoluminescence. The author has an hindex of 18, co-authored 103 publications receiving 1344 citations. Previous affiliations of Baikui Li include Hong Kong University of Science and Technology & University of Hong Kong.
Papers
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Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.
TL;DR: The nitridized 2D/3D heterostructure with effective interface treatment exhibits a clean band gap and substantial optical absorption ability and could be potentially used as practical photocatalyst for hydrogen generation by water splitting using solar energy.
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High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
TL;DR: In this paper, it was shown that linear magneto-resistance is associated with the gapless topological surface states and of quantum origin in topological insulator Bi2Se3 films.
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Mechanism of Threshold Voltage Shift in ${p}$ -GaN Gate AlGaN/GaN Transistors
TL;DR: In this article, the authors investigated the threshold voltage (V) shift in a p-GaN gate AlGaN/GaN transistor by designed gate-bias pulse measurements.
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Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor
Jin Wei,Shenghou Liu,Baikui Li,Xi Tang,Yunyou Lu,Cheng Liu,Mengyuan Hua,Zhaofu Zhang,Gaofei Tang,Kevin J. Chen +9 more
TL;DR: In this paper, a low on-resistance GaN double-channel metal-oxide-semiconductor high-electron-mobility transistor (DC-MOS-HEMT) is proposed and demonstrated, which features a 1.5-nm AlN insertion layer located 6 nm below the conventional barrier/GaN interface, forming a second channel at the interface between the AlN-ISL and the underlying GaN.
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Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs
TL;DR: In this article, the threshold voltage instability of metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) is investigated, and the existence of bulk traps is implied by a slow time-dependent shift of VT under large gate bias.